Investigation on Excited-State Properties and Electroluminescence Performance of Donor−Acceptor Materials Based on Quinoxaline Derivatives

Changjiang Zhou,Xiangyu Zhang,Guocui Pan,Xuzhou Tian,Shengbing Xiao,Haichao Liu,Shitong Zhang,Bing Yang
DOI: https://doi.org/10.1016/j.orgel.2019.105414
IF: 3.868
2019-01-01
Organic Electronics
Abstract:The reverse intersystem crossing (RISC) process plays a decisive role in next-generation organic light-emitting diodes (OLEDs), which depends on the energy gap and spin-orbit coupling (SOC) between singlet state and triplet state. To investigate the excited state structure-property relationship and the SOC effect in electro-fluorescent donor-acceptor (D-A) materials, herein, we constructed four quinoxaline derivatives based donor-acceptor (D-A) materials and investigated their excited state properties with a theoretical combined experimental research. The four materials are of different hybridized local and charge-transfer (HLCT) characters. Among them, the most hybridized TPA-DPPZ achieved a higher quantum efficiency over 90% for the effective suppression of non-radiative transition, and it exhibited a higher exciton utilization of 42.8% in non-doped OLED due to a "hot-exciton" channel facilitated with sizeable SOC.
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