Electron–Phonon Relaxation at Au/Ti Interfaces is Robust to Alloying: Ab Initio Nonadiabatic Molecular Dynamics

Yi-Siang Wang,Xin Zhou,John A. Tomko,Ashutosh Giri,Patrick E. Hopkins,Oleg V. Prezhdo

DOI: https://doi.org/10.1021/acs.jpcc.9b06914

2019-01-01

Abstract:Charge and energy transfer at nanoscale metal/metal and metal/semiconductor interfaces are essential for modern electronics, catalysis, photovoltaics, and other applications. Experiments show that a thin Ti adhesion layer deposited between an Au film and a semiconductor substrate greatly accelerates electron-vibrational energy transfer. We employ ab initio real-time time-dependent density functional theory and nonadiabatic molecular dynamics to rationalize this effect and to demonstrate that it is robust to details of Au–Ti atom alloying at the interface. Both perfect Ti adhesion layers and Ti layers alloyed with Au accelerate the rate of energy transfer by about the same amount. The effect arises because lighter Ti atoms introduce higher frequency vibrations and because Ti atoms exhibit high density of states near the Fermi level of Au. The effect vanishes only when Ti is embedded into Au in the form of isolated atoms, because electronic states of isolated Ti atoms do not cover a sufficiently wide energy range. The calculations demonstrate how one can design novel and robust structures to control and manipulate ultrafast energy transfer in nanoscale devices. The design principles established in the current work can be used to improve heat dissipation and to tailor highly nonequilibrium charge distributions.