Ferroelectric and photoluminescence properties of (Ca, Eu)Bi 2 Ta 2 O 9 thin films prepared by pulsed laser deposition

Ruirui Cui,Xiang Guo,Chi Zhang,Chaoyong Deng

DOI: https://doi.org/10.1007/s10854-019-01820-0

2019-01-01

Abstract:Thin films of CaBi 2 Ta 2 O 9 (CBT) and Eu 3+ doped CaBi 2 Ta 2 O 9 (CEBT) were deposited on platinum-coated silicon substrates via the pulsed laser deposition technique. The microstructural, leakage current, ferroelectric behavior and photoluminescence properties of CBT/CEBT films were systematically studied. The CBT/CEBT films form single phase with a polycrystalline perovskite structure is confirmed by X-ray diffraction, and the CEBT films exhibit better crystallinity when doped with a number of Eu 3+ ions. Meantime, the ferroelectric hysteresis loops show that enhanced ferroelectric property with a remnant polarization 2P r = 8 μC/cm 2 are obtained from CEBT film when x = 0.15. Leakage current density curves show that the Eu 3+ doping could lead to the increase of leakage current of CBT film. Furthermore, under the excitation of 394 nm and 464 nm light, the thin films exhibit yellow and red emission peaks centered at 592 nm and 613 nm, which attributes to the f–f electronic transition of 5 D 0 → 7 F 1 and 5 D 0 → 7 F 2 of Eu 3+ ions. This study suggests that Eu 3+ doped CaBi 2 Ta 2 O 9 films have a potential application in the new multifunctional photoluminescence ferroelectric thin-film devices.