Excellent energy storage density and charge–discharge performance of a novel Bi0.2Sr0.7TiO3–BiFeO3 thin film

Baijie Song,Shuanghao Wu,Feng Li,Pan Chen,Bo Shen,Jiwei Zhai

DOI: https://doi.org/10.1039/c9tc03032h

IF: 6.4

2019-01-01

Journal of Materials Chemistry C

Abstract:Lead-free (1-x)Bi0.2Sr0.7TiO3-xBiFeO(3) (x = 0-0.4, denoted as BST-xBFO) thin films were deposited on Pt(111)/Ti/SiO2/Si substrates by a sol-gel/spin coating technique and their microstructures, dielectric properties and energy storage were investigated in detail. A single perovskite phase and high-density microstructure are obtained in all thin films. Moreover, the hysteresis loss in the BST-xBFO system is relatively low accompanied by high breakdown strength. An excellent energy storage density of 48.5 J cm(-3) with an efficiency of 47.57% is obtained under high breakdown strength similar to 4800 kV cm(-1) in a 0.9BST-0.1BFO thin film capacitor. This capacitor also presents excellent thermal stability with minimal variation of both the energy storage density (<13%) and efficiency (<15%) in a wide temperature range (30-120 degrees C). What's more, the 0.9BST-0.1BFO thin film capacitor possesses a fast discharge speed with a release time of 0.22 mu s. All results strongly suggest that the lead-free 0.9BST-0.1BFO thin film is a promising material for energy storage applications. More importantly, BST-xBFO is a recently developed new system and the findings could provide new ideas about the design and fabrication of lead-free dielectrics with high energy storage density and fast charge-discharge speed.