Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy
Shishun Zhao,Lei Wang,Ziyao Zhou,Chunlei Li,Guohua Dong,Le Zhang,Bin Peng,Tai Min,Zhongqiang Hu,Jing Ma,Wei Ren,Zuo-Guang Ye,Wei Chen,Pu Yu,Ce-Wen Nan,Ming Liu
DOI: https://doi.org/10.1002/adma.201801639
IF: 29.4
2018-01-01
Advanced Materials
Abstract:Electric field (E-field) modulation of perpendicular magnetic anisotropy (PMA) switching, in an energy-efficient manner, is of great potential to realize magnetoelectric (ME) memories and other ME devices. Voltage control of the spin-reorientation transition (SRT) that allows the magnetic moment rotating between the out-of-plane and the in-plane direction is thereby crucial. In this work, a remarkable magnetic anisotropy field change up to 1572 Oe is achieved under a small operation voltage of 4 V through ionic liquid (IL) gating control of SRT in Au/[DEME]+ [TFSI]- /Pt/(Co/Pt)2 /Ta capacitor heterostructures at room temperature, corresponding to a large ME coefficient of 378 Oe V-1 . As revealed by both ferromagnetic resonance measurements and magnetic domain evolution observation, the magnetization can be switched stably and reversibly between the out-of-plane and in-plane directions via IL gating. The key mechanism, revealed by the first-principles calculation, is that the IL gating process influences the interfacial spin-orbital coupling as well as net Rashba magnetic field between the Co and Pt layers, resulting in the modulation of the SRT and in-plane/out-of-plane magnetization switching. This work demonstrates a unique IL-gated PMA with large ME tunability and paves a way toward IL gating spintronic/electronic devices such as voltage tunable PMA memories.