Simulation to confirm the existence of distinct low-temperature regions in a Si melt using an insulating plate under the crucible bottom for the noncontact crucible method

Kazuo Nakajima,Tomohiro Adachi,Harumasa Itoh,Deren Yang
DOI: https://doi.org/10.1016/j.jcrysgro.2019.125160
IF: 1.8
2019-01-01
Journal of Crystal Growth
Abstract:•The existence of low-temperature region can be confirmed by the simulation.•The heat flow can be effectively prevented using the insulating plate.•The large low-temperature region can be clearly established using the insulator plate.•The temperature gradient in the NOC ingot is smaller than that in the CZ ingot.
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