Review and Prospect of Junction Temperature Extraction Principle of High Power Semiconductor Devices

LI Wuhua,CHEN Yuxiang,LUO Haoze,ZHOU Yu,YANG Huan,HE Xiangning
DOI: https://doi.org/10.13334/j.0258-8013.pcsee.160623
2016-01-01
Abstract:The great revolution of power production, transmission and consumption has led to an increasing demand for the reliable power converters with large-capacity. It is reported that temperature induced device failure is the most significant factor for the power electronics systems failure. The precise junction temperature extraction is essential for the aging estimation, state of health management and reliability assessment for the high power conversion systems. The state-of-the-art junction temperature measurement principles are thoroughly reviewed and compared. Especially, the temperature sensitive electrical parameter (TSEP) based method is detailedly introduced and evaluated from the criteria of linearity, sensitivity, genericity, etc. Finally, the major challenges and future possible research topics of on-line junction temperature extraction for high power semiconductor devices are summarized.
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