Highly Mobile Carriers in a Candidate of Quasi-Two-dimensional Topological Semimetal AuTe2Br

Zeji Wang,Shuyu Cheng,Tay-Rong Chang,Wenlong Ma,Xitong Xu,Huibin Zhou,Guangqiang Wang,Xin Gui,Haipeng Zhu,Zhen Zhu,Hao Zheng,Jinfeng Jia,Junfeng Wang,Weiwei Xie,Shuang Jia
DOI: https://doi.org/10.1063/1.5121751
IF: 6.6351
2019-01-01
APL Materials
Abstract:We report the crystal and electronic structures of a non-centrosymmetric quasi-two-dimensional (2D), candidate of topological semimetal AuTe2Br. The Fermi surface of this layered compound consists of 2D-like, topological trivial electron and non-trivial hole pockets which host a Dirac cone along the kz direction. Our transport measurements on the single crystals show highly anisotropic, compensated low-density electrons and holes, both of which exhibit ultrahigh mobility at a level of 10^5cm^2V^-1s^-1 at low temperature. The highly mobile, compensated carriers lead a non-saturated, parabolic magnetoresistance as large as 3*10^5 in single-crystalline AuTe2Br in a magnetic field up to 58 T.
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