Plasmonic Modes in 2-Dimensional (2D) Metal-Oxide-semiconductor Structure

Huang Yifeng,Hong Wei
DOI: https://doi.org/10.1109/wocc.2019.8770521
2019-01-01
Abstract:In this article, we present two designs of 2-dimensional (2D) metal-oxide-semiconductor (MOS) structure and study plasmonic modes supported by these structures at mid-infrared frequencies. Due to strong field enhancement effect of a epsilon-near-zero area formed inside the semiconductor under electron accumulation status, the plasmonic modes found show strong localization properties with mode area at 10 -3 ~10 -6 λ 2 and can be manipulated by changing gate voltage. The results indicate that these structures are possible options for semiconductor SPP waveguide in infrared and Terahertz frequency.
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