Precision measurement of Compton scattering in silicon with a skipper CCD for dark matter detection
D.Norcini,N.Castello-Mor,D.Baxter,N.J.Corso,J.Cuevas-Zepeda,C.De Dominicis,A.Matalon,S.Munagavalasa,S.Paul,P.Privitera,K.Ramanathan,R.Smida,R.Thomas,R.Yajur,A.E.Chavarria,K.McGuire,P.Mitra,A.Piers,M.Settimo,J.Cortabitarte Gutierrez,J.Duarte-Campderros,A.Lantero-Barreda,A.Lopez-Virto,I.Vila,R.Vilar,N.Avalos,X.Bertou,A.Dastgheibi-Fard,O.Deligny,E.Estrada,N.Gadloa,R.Gaior,T.Hossbach,L.Khalil,B.Kilminster,I.Lawson,S.Lee,A.Letessier-Selvon,P.Loaiza,G.Papadopoulos,P.Robmann,M.Traina,G.Warot,J-P.Zopounidis
DOI: https://doi.org/10.1103/PhysRevD.106.092001
2022-07-02
Abstract:Experiments aiming to directly detect dark matter through particle recoils can achieve energy thresholds of $\mathcal{O}(1\,\mathrm{eV})$. In this regime, ionization signals from small-angle Compton scatters of environmental $\gamma$-rays constitute a significant background. Monte Carlo simulations used to build background models have not been experimentally validated at these low energies. We report a precision measurement of Compton scattering on silicon atomic shell electrons down to 23$\,$eV. A skipper charge-coupled device (CCD) with single-electron resolution, developed for the DAMIC-M experiment, was exposed to a $^{241}$Am $\gamma$-ray source over several months. Features associated with the silicon K, L$_{1}$, and L$_{2,3}$-shells are clearly identified, and scattering on valence electrons is detected for the first time below 100$\,$eV. We find that the relativistic impulse approximation for Compton scattering, which is implemented in Monte Carlo simulations commonly used by direct detection experiments, does not reproduce the measured spectrum below 0.5$\,$keV. The data are in better agreement with $ab$ $initio$ calculations originally developed for X-ray absorption spectroscopy.
Instrumentation and Detectors,Instrumentation and Methods for Astrophysics,High Energy Physics - Experiment