Abstract:Monolayer two-dimensional transition metal dichalcogenides (TMDCs) exhibit strong Coulomb interactions, which provide an ideal platform for the fundamental studies of many-body correlated excitonic states. As a typical representative of many-body problems, the neutral exciton and charged exciton have been widely studied. However, some high-order excitonic states involving more particles, such as four-body biexciton and five-body charged biexciton, remain elusive because of the requirement of a high exciton density. Herein, we present an observation of a five-particle positively charged biexciton in monolayer WSe2, which is rarely reported to the best of our knowledge, by achieving a high exciton density in the GaSe/WSe2 heterostructure with a type-I band alignment. The nature of the positively charged biexciton in monolayer WSe2 is confirmed by the studies of the excitation-power-dependent and gate-voltage-dependent photoluminescence measurements. The mechanism of formation of the positively charged biexciton is also elaborated in the view of the band alignment of the GaSe/WSe2 heterostructure. In the GaSe/WSe2 heterostructure with type-I band alignment, the excessive hole carriers transfer into WSe2 and facilitate the formation of the positively charged exciton and further facilitate the formation of the positively charged biexciton in WSe2. The influence of charge transfer on the excitonic properties in the type-I band heterostructure by funneling excitons into one layer is very different from that in most TMDCs van der Waals heterostructures with type-II band alignments in which the electrons and holes are confined in two separate layers. These investigations provide a better understanding of the high-order excitonic states in monolayer TMDCs and offer some basis for exploration of the related phenomena of the many-body effect and the biexciton laser based on van der Waals heterostructures.

Interface Charge-Transfer Induced Intralayer Excited-State Biexcitons In Graphene/Ws2 Van Der Waals Heterostructures

Inter-layer charge transport controlled by exciton-trion coherent coupling

Polaronic Trions Induced by Strong Interfacial Coupling in Monolayer WSe2

Charge-Accumulation Effect in Transition Metal Dichalcogenide Heterobilayers.

Charge-tuneable Biexciton Complexes in Monolayer WSe2.

Long-lived Charge Separation Following Pump-Wavelength–dependent Ultrafast Charge Transfer in Graphene/ws2 Heterostructures

Positively Charged Biexcitons in Monolayer WSe 2 in Type-I GaSe/WSe 2 van der Waals Heterostructures: Implications for the Biexciton Laser

Positively Charged Biexcitons in Monolayer WSe2 in Type-I GaSe/WSe2 Van Der Waals Heterostructures: Implications for the Biexciton Laser

Observation of Transient Trion Induced by Ultrafast Charge Transfer in Graphene/MoS2 Heterostructure

Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure

Biexciton fine structure in monolayer transition metal dichalcogenides

Tunable Control of Interlayer Excitons in WS 2 /MoS 2 Heterostructures via Strong Coupling with Enhanced Mie Resonances

Tunable ultrafast electron transfer in WSe2-graphene heterostructures enabled by atomic stacking order

Controlling relaxation dynamics of excitonic states in monolayer transition metal dichalcogenides WS 2 through interface engineering

Charged Bosons Made of Fermions in Bilayer Structures with Strong Metallic Screening

Highly mobile charge-transfer excitons in two-dimensional WS 2 /tetracene heterostructures.

Controlling relaxation dynamics of excitonic states in monolayer transition metal dichalcogenides WS2 through interface engineering

Revealing the biexciton and trion-exciton complexes in BN encapsulated WSe2

Optically induced trion formation and its control in a MoS2/graphene van der Waals heterostructure

Quadrupolar–dipolar excitonic transition in a tunnel-coupled van der Waals heterotrilayer

Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS2 and InGaN Quantum Dots