Abstract:Photonic switches have attractive application prospects in optical communication data networks that require dynamic reconfiguration. Integrating optical switching devices with optical fiber, the most widely deployed photonic technology platform, can realize signal transmission and processing in practical applications. Here, we demonstrate the multilevel optical switching using the phase-change material Ge2Sb2Te5 (GST) integrated on a graded-index multimode fiber. This switching process works by exploiting the significant difference in extinction coefficient between the crystalline state and the amorphous state of the GST. Using GST to achieve the switch function, no external energy source is needed to maintain the existing state of the switch, and the device is nonvolatile. This multi-level optical switch is an all-fiber integrated device. We apply GST to the end facets of the graded-index multimode fiber by magnetron sputtering, which is a reflective structure. A pulsing scheme is used to control the optical propagation state of the optical modulation signal to realize the switching function. It can store up to 11 non-volatile reliable and repeatable levels encoded by the pump source laser with a wavelength of 1550 nm. At the same time, the switching process between states is on the order of hundreds of nanoseconds. The present experimental results demonstrate the feasibility of 11 multilevel states in the field of optical fibers commonly used in communications. It can be well coupled with the all-fiber terminal device. It also shows that the device is still applicable in the 1525 nm∼1610 nm broadband range, promising for designing future multilevel photonic switches and memory devices.

Design of Ultra-Compact Optical Memristive Switches with GST as the Active Material.

All-optically Modulated Nonvolatile Optical Switching Based on a Graded-Index Multimode Fiber.

Miniature Multi-Level Optical Memristive Switch Using Phase Change Material

Resonant Multilevel Optical Switching with Phase Change Material GST

All-fiber Nonvolatile Optical Switch

Design of Phase Change Ge2Sb2Te5 Based On-off Electro-Optic Switch

Non-volatile Flexible-Grid Wavelength-Selective Switch Using Subwavelength-Grating-ge2sb2te5-assisted Silicon Microring Resonators

Resonant-enhanced Optical Switch Based on Non-Volatile Phase Change Material GST

Electrically Controlled 1 × 2 Tunable Switch Using a Phase Change Material Embedded Silicon Microring.

Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation

Inverse Design and Numerical Investigations of an Ultra-Compact Integrated Optical Switch Based on Phase Change Material

Electro-Optical Switch Using Ge2Sb2Te5 Phase-Change Material in a Silicon MZI Structure

Multiphysics simulations of a cylindrical waveguide optical switch using phase change materials on silicon

Nonvolatile Multilevel Switching of Silicon Photonic Devices with In<sub>2</sub>O<sub>3</sub>/GST Segmented Structures

The Realization of Optical Switching Generated from the Combination of Ag/A-Si/P-Si Memristor and Silicon Waveguide

Ultra-Compact Multi-Level Optical Switching with Non-Volatile GST Phase Change

Design of Low Loss 1 × 1 and 1 × 2 Phase-Change Optical Switches with Different Crystalline Phases of Ge2Sb2Te5 Films

Nonvolatile Multilevel Switching of Silicon Photonic Devices with In2O3/GST Segmented Structures

Feasibility Study of a Ge2Sb2Te5-clad Silicon Waveguide As a Non-Volatile Optical On-off Switch

Design, Optimization, and Performance Evaluation of GSST Clad Low-Loss Non-Volatile Switches.

Nonvolatile Waveguide Transmission Tuning with Electrically-Driven Ultra-Small GST Phase-Change Material.