Nonmagnetic Doping Induced Quantum Anomalous Hall Effect in Topological Insulators

Shifei Qi,Ruiling Gao,Maozhi Chang,Tao Hou,Yulei Han,Zhenhua Qiao
DOI: https://doi.org/10.1103/physrevb.102.085419
2020-01-01
Abstract:Quantum anomalous Hall effect (QAHE) has been experimentally observed in magnetically doped topological insulators. However, ultralow temperatures (usually below 300 mK), which are mainly attributed to inhomogeneous magnetic doping, become a daunting challenge for potential applications. Here, a nonmagnetic-doping strategy is proposed to produce ferromagnetism and realize QAHE in topological insulators. We numerically demonstrate that magnetic moments can be induced by nonmagnetic nitrogen or carbon substitution in ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3},$ ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3},$ and ${\mathrm{Sb}}_{2}{\mathrm{Te}}_{3}$, while only nitrogen-doped ${\mathrm{Sb}}_{2}{\mathrm{Te}}_{3}$ system can exhibit long-range ferromagnetism and preserve large bulk band gaps. We further show that its corresponding thin film can harbor QAHE at temperatures of 17--29 Kelvin, which is two orders of magnitude higher than typical realized temperatures in similar systems. Our proposed nonmagnetic doping scheme may shed light on experimental realization of high-temperature QAHE in topological insulators.
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