A 0.4-V <inline-formula> <tex-math notation="LaTeX">$G_{m}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">$C$ </tex-math></inline-formula> Proportional-Integrator-Based Continuous-Time <inline-formula> <tex-math notation="LaTeX">$\Delta\Sigma$ </tex-math></inline-formula>
Lishan Lv,Ankesh Jain,Xiong Zhou,Joachim Becker,Qiang Li,Maurits Ortmanns
DOI: https://doi.org/10.1109/jssc.2018.2866084
IF: 5.4
2018-01-01
IEEE Journal of Solid-State Circuits
Abstract:This paper presents a <inline-formula> <tex-math notation="LaTeX">$G_{m}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">$C$ </tex-math></inline-formula>-based <inline-formula> <tex-math notation="LaTeX">$\Delta \Sigma $ </tex-math></inline-formula> modulator under 0.4-V supply. A 3rd-order continuous-time <inline-formula> <tex-math notation="LaTeX">$\Delta \Sigma $ </tex-math></inline-formula> modulator is proposed by cascading three <inline-formula> <tex-math notation="LaTeX">$G_{m}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">$C$ </tex-math></inline-formula> proportional integra- tors (PIs) with a feedforward resistor for the proportional path, which minimizes the output swing of each integrator and ensures that the last two transconductors operate within their linear input range. A nine-tap finite-impulse response (FIR) digital to analog converter (DAC) in front of the first <inline-formula> <tex-math notation="LaTeX">$G_{m}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">$C$ </tex-math></inline-formula> integrator filters the large out-of-band quantization noise from the feedback signal, generating a quiet input of the first transconductor for better linearity. A feedback bias control technique is proposed to achieve a stable transconductance of the <inline-formula> <tex-math notation="LaTeX">$G_{m}$ </tex-math></inline-formula> cells under low supply voltages. The proposed <inline-formula> <tex-math notation="LaTeX">$\Delta \Sigma $ </tex-math></inline-formula> modulator is fabricated in a 90-nm CMOS and achieves 74.4-dB peak signal-to-noise and distortion ratio (SNDR), 85.2-dB peak spurious free dynamic range (SFDR), and 78.5-dB dynamic range (DR) within a 50-kHz bandwidth, which is the first demonstration of <inline-formula> <tex-math notation="LaTeX">$G_{m}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">$C$ </tex-math></inline-formula>-based modulators under near-threshold supply voltages. The FoM<sub><italic>w</italic></sub> is 61.2 fJ/conversion-step, and FoM<sub><italic>s</italic></sub> is 167 dB, outperforming the reported low-voltage <inline-formula> <tex-math notation="LaTeX">$\Delta \Sigma $ </tex-math></inline-formula> modulator designs.