Tunable Giant Anomalous Hall Angle in Perpendicular Multilayers by Interfacial Orbital Hybridization

Jingyan Zhang,Wenlin Peng,Guanghua Yu,Zhanbing He,Feng Yang,Wei Ji,Chen Hu,Shouguo Wang
DOI: https://doi.org/10.1021/acsami.9b06204
IF: 9.5
2019-01-01
ACS Applied Materials & Interfaces
Abstract:A spintronic device based on the spin-dependent Hall effect has attracted great interest because of its great potential applications in the multivalue storage and logic gate, which is a promising candidate to break the bottleneck of the information industry in the big data period. It is a technological challenge to implant spintronic devices into semiconductor integrated circuits. The anomalous Hall angle (theta), defined as the deviation of the electron flow from the current direction, is the key parameter to evaluate the capacity of Hall device compatibility. However, the bottleneck for the device is low theta (less than 5%) at room temperature (RT), making it difficult to directly complement with the semiconductor circuit which limits its potential application. Here, we report a simple perpendicular multilayered structure with theta up to 5.1% at RT. Wide working temperature (250-350 K) across RT for our samples will accelerate the potential applications in spintronic memory. A giant Hall angle at RT originates from the enhanced side-jump scattering at the atomic-scale-modified interfacial structure. The high theta at RT together with wide working temperature is practically significant and may provide the way for further 3D spintronic devices based on the spin-dependent Hall effect with ultrahigh storage density and ultralow power consumption.
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