Giant built-in electric field enabled quantum-confined Stark effects
Yuerui Lu,Shenmiao Yang,Xueqian Sun,Fei Zhou,Jian Kang,Mengru Li,Xiaolong Liu,Yan Han,Yildrim Tanju,Xiaoguang Luo,Jiajie Pei,Hucheng Song,Shiqiang Qin,Youwen Liu,Linglong Zhang
DOI: https://doi.org/10.21203/rs.3.rs-3450731/v1
2023-01-01
Abstract:Abstract Quantum-confined Stark effects (QCSEs), where external or built-in electric fields modify optical transition energies 1-6 , have garnered significant interest due to their potential for tuning emission energies to couple with quantum dots, metasurfaces and cavities, etc 1-3,7,8 . However, only external electric-field-enabled QCSEs in 2D semiconductors have been reported so far 1-3 , owing to the challenges posed by small and uncontrollable built-in electric fields 2,3 , as well as charge modulation effects 9-14 . Here we report the first observation of giant built-in electric field-enabled QCSEs in 1L WSe2/1L graphene heterostructure (HS), based on chemical potential calculations. Electrical control of QCSEs demonstrates a maximum Stark shift of ~56.97 meV. This significant shift is attributed to enhanced built-in electric fields, resulting from the increased chemical potential difference induced by electrostatic doping. While increasing optical doping or reducing the interlayer distance, QCSEs weaken due to the reduced built-in electric fields. By leveraging efficient exciton dissociations from built-in electric fields 15,16 , the responsivity ( R ) and response speed of HS photodetectors increase by 6 orders of magnitude and 3 folds, respectively, compared to 1L WSe 2 . Our results offer a new avenue for expanding the tunability for excitons and exploiting the application potentials for 2D material in photodetectors, polariton transistors and quantum light sources.