Abstract:In this paper, the processing parameters of growing GaN epilayer by hydride vapor phase epitaxy are optimized The influences of the low-temperature (LT) nucleation layer growth time, WM precursor ratio and the growth temperature on GaN layer are investigated by the high-resolution X-ray diffraction (HRXRD) signature for the asymmetric and symmetric reflections. The investigation finds that the LT-nucleation layer not only supplies the nucleation centers having good crystal quality, but also promotes the lateral growth of the sequent high temperature (HT) growth. The optimal LT nucleation layer growth time, WEI precursor ratio and the growth temperature can effectively enhance lateral growth to reduce the crystal defects and are favorable to converting the growth mechanism from threedimension to two-dimension in HT growth. The structural and optoelectronic properties of the as-grown GaN layer with a thickness of 15 um at the optimal parameters are studied by scanning electron microcopy, atomic force microscopy (AFM), HRXRD, Raman spectra, and photoluminescence (PL) measurements. X-ray rocking curves show that the full widths at half maximum of (002) and (102) are 317 and 343 arcsec, respectively. The surface roughness (rms: root mean square) is 0.334 nm detected using AFM. These characteristics show that the sample has good lattice quality and smooth surface morphology. In PL spectrum, the near band edge emission is dominated by emission from excitons bound to neutral donors (D X) near 3.478 eV with 11 meV blue-shift and the yellow band emission is very weak. The results indicate that the GaN layer has good crystal quality and excellent optoelectronic properties, but a little biaxial in-plane compressive strain also exists in it due to the lattice and thermal mismatch.

GaN crystals growth in the Na-Li-Ca flux by liquid phase epitaxy (LPE) technique

A Study on the Growth Process for Liquid Phase Epitaxy of GaN Crystal Using Na–Li–Ca Flux

Analysis of GaN Crystal Growth Mechanism in Liquid-Phase Epitaxial Na-flux Method

Fabrication of GaN Single Crystals at 700°C Using Na-Li-Ca Mixed Flux System

GaN Single Crystals: Growth Mechanism and Temperature-Modulated Growth Using Li3N Flux

Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal-Organic Chemical Vapor Deposition

Growth Temperature Dependence of Morphology of GaN Single Crystals in the Na-Li-Ca Flux Method

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

Growth Behavior and Stress Distribution of Bulk GaN Grown by Na-flux with HVPE GaN Seed under Near-Thermodynamic Equilibrium

Bulk GaN Single Crystals: a Reinvestigation of Growth Mechanism Using Li 3 N Flux

Growth of GaN Crystals by Na Flux Method under 7 MPa Nitrogen Pressure

Plasma Assisted Molecular Beam Epitaxial Growth of GaN with Low Growth Rates and Their Properties

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

Growth of GaN Crystals by the Na Flux Method under a Temperature Gradient

Crystalline Quality Improvement of GaN Coalesced Using Nano‐pss with Void‐embedded Nanostructure by MOVPE

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD

Research Progress of GaN Crystal Grown by Na Flux Method

Growth of Gan Single Crystals by Li3n Flux with Mn As Addition