Stability and Electronic Properties of O Vacancies and Ce4+ in Lu2SiO5 Tuned by C Doping

Lingchun Jia,Mu Gu,Ge Song,Jiajie Zhu
DOI: https://doi.org/10.1016/j.optmat.2019.04.062
IF: 3.754
2019-01-01
Optical Materials
Abstract:Lu2SiO5:Ce is a well-known scintillator with high density, high light yield, and short decay time. Oxygen vacancies and Ce4+ have been demonstrated to degrade the scintillating properties. We investigate the effect of C doping on the stability and electronic properties of the oxygen vacancies and the Ce4+ in Lu2SiO5. Stability of the C atom at the O site and the interstitial site depends on the O chemical potential. The C defects have strong interaction with nearby oxygen vacancies and Ce4+. Importantly, C doping can tune the amount of the oxygen vacancies and Ce4+ in Lu2SiO5. C doping introduces defect bands in the band gap of Lu2SiO5 with the energies ranging from 0.13 eV to 2.1 eV above the valence band maximum.
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