A Highly Sensitive Perovskite/Organic Semiconductor Heterojunction Phototransistor and Its Device Optimization Utilizing the Selective Electron Trapping Effect

Lin‐Bao Luo,Guo‐An Wu,Yang Gao,Lin Liang,Chao Xie,Zhi‐Xiang Zhang,Xiao‐Wei Tong,Tao Wang,Feng‐Xia Liang
DOI: https://doi.org/10.1002/adom.201900272
IF: 9
2019-01-01
Advanced Optical Materials
Abstract:Hybrid organic-inorganic perovskite materials have recently attracted attention due to their impressive physical properties and promising application in future optoelectronic devices and systems. In this study, a high-performance and broadband photodetector comprising vertically stacked Cs-doped formanidinium lead iodide (FAPbI(3)) perovskite/dinaphtho[2,3-b:2 ',3 '-f]thieno[3,2-b]thiophene heterojunction, which shows a high responsivity of 778 A W-1 and a specific detectivity of 1.04 x 10(13) Jones, is reported. In addition, the photodetector displays excellent stability and broadband responsivity to illumination ranging from deep-ultraviolet to near-infrared light. It is interesting to note that doping a small amount of [6,6]-phenyl-C-61-butyric acid methyl ester (PCBM) into the perovskite film results in a substantial increase in responsivity, specific detectivity, and photoconductive gain. Specifically, the specific detectivity is as high as 7.96 x 10(13) Jones, which is much higher than that of other devices with similar geometries. The device optimization can be ascribed to an enhanced electron-hole separation ability and increase in electron accepting sites that can selectively trap electrons in the perovskite-PCBM bulk heterojunction, according to results from the experimental analyses.
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