Room temperature bonding of GaN on diamond by using Mo/Au nano-adhesion layer

Kang Wang,Kun Ruan,Wen-Bo Hu,Sheng-Li Wu,Hong-Xing Wang

DOI: https://doi.org/10.23919/LTB-3D.2019.8735406

2019-01-01

Abstract:For solving the heat dissipation of high-power GaN devices, GaN was bonded on diamond at room temperature by using Mo/Au nano-adhesion layer. For a bonded GaN-on-diamond sample, the voidage is less than 3.0%, and the tensile strength reaches 6.8 MPa.

What problem does this paper attempt to address?

Investigation on the bonding quality of GaN and Si wafers bonded with Mo/Au nano-layer in atmospheric air

Kang Wang,Kun Ruan,Haiyang Bai,Wenbo Hu,Shengli Wu,Hongxing Wang

DOI: https://doi.org/10.1016/j.mssp.2020.105069

IF: 4.1

2020-08-01

Materials Science in Semiconductor Processing

Abstract:A room-temperature bonding process based on Mo/Au nano-layer was applied to bond GaN on Si wafers in atmospheric air. The analytical test results show that a low bonding defect density (0.2%) and a strong bonding strength (10.0 MPa) were achieved for the GaN/Si sample bonded with Mo/Au nano-layer. The bonding defect density of the bonded GaN/Si sample remained mostly unchanged and each of Au/Au, Au/Mo/GaN and Au/Mo/Si interfaces had a strong adhesion strength after 1000-cycles thermal cycling testing. In addition, Mo/Au ohmic contact on n-type GaN was realized by Ar+ ion beam treatment on the GaN surface.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices

Zhe Cheng,Fengwen Mu,Luke Yates,Tadatomo Suga,Samuel Graham

DOI: https://doi.org/10.1021/acsami.9b16959

2020-01-27

Abstract:The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications, such as wireless communication and radar systems. However, the performance and reliability of GaN-based high-electron-mobility transistors (HEMTs) are limited by the high channel temperature induced by Joule heating in the device channel. Integration of GaN with high thermal conductivity substrates can improve the heat extraction from GaN-based HEMTs and lower the operating temperature of the device. However, heterogeneous integration of GaN with diamond substrates presents technical challenges to maximize the heat dissipation potential brought by the ultrahigh thermal conductivity of diamond substrates. In this work, two modified room-temperature surface-activated bonding (SAB) techniques are used to bond GaN and single-crystal diamond. Time-domain thermoreflectance (TDTR) is used to measure the thermal properties from room temperature to 480 K. A relatively large thermal boundary conductance (TBC) of the GaN/diamond interfaces with a ∼4 nm interlayer (∼90 MW/(m2 K)) was observed and material characterization was performed to link the interfacial structure with the TBC. Device modeling shows that the measured TBC of the bonded GaN/diamond interfaces can enable high-power GaN devices by taking full advantage of the ultrahigh thermal conductivity of single-crystal diamond. For the modeled devices, the power density of GaN-on-diamond can reach values ∼2.5 times higher than that of GaN-on-SiC and ∼5.4 times higher than that of GaN-on-Si with a maximum device temperature of 250 °C. Our work sheds light on the potential for room-temperature heterogeneous integration of semiconductors with diamond for applications of electronics cooling, especially for GaN-on-diamond devices.

materials science, multidisciplinary,nanoscience & nanotechnology
A Novel Strategy for GaN-on-Diamond Device with a High Thermal Boundary Conductance

Fengwen Mu,Bin Xu,Xinhua Wang,Runhua Gao,Sen Huang,Ke Wei,Kai Takeuchi,Xiaojuan Chen,Haibo Yin,Dahai Wang,Jiahan Yu,Tadatomo Suga,Junichiro Shiomi,Xinyu Liu

DOI: https://doi.org/10.48550/arXiv.2107.10473

2021-07-22

Abstract:To achieve high device performance and high reliability for the gallium nitride (GaN)-based high electron mobility transistors (HEMTs), efficient heat dissipation is important but remains challenging. Enormous efforts have been made to transfer a GaN device layer onto a diamond substrate with a high thermal conductivity by bonding. In this work, two GaN-diamond bonded composites are prepared via modified surface activated bonding (SAB) at room temperature with silicon interlayers of different thicknesses (15 nm and 22 nm). Before and after post-annealing process at 800 oC, thermal boundary conductance (TBC) across the bonded interface including the interlayer and the stress of GaN layer are investigated by time-domain thermoreflectance and Raman spectroscopy, respectively. After bonding, the 15 nm Si interlayer achieved a higher TBC. The post-annealing significantly increased the TBC of both interfaces, while the TBC of 22 nm silicon interlayer increased greater and became higher than that of 15 nm. Detailed investigation of the microstructure and composition of the interfaces were carried out to understand the difference in interfacial thermal conduction. The obtained stress was no more than 230 MPa for both before and after the annealing, and this high thermal stability of the bonded composites indicates that the room temperature bonding can realize a GaN-on-diamond template suitable for further epitaxial growth or device process. This work brings a novel strategy of SAB followed by high-temperature annealing to fabricate a GaN-on-diamond device with a high TBC.

Applied Physics
Room temperature bonding of diamond/Si with Mo/Au interlayers in atmospheric air

Fei Wang,Fei Wang,Kang Wang,Genqiang Chen,Genqiang Chen,Fang Lin,Fang Lin,RuoZheng Wang,RuoZheng Wang,Wei Wang,Wei Wang,Minghui Zhang,Minghui Zhang,Wenbo Hu,Wenbo Hu,Hongxing Wang,Hongxing Wang

DOI: https://doi.org/10.1016/j.diamond.2023.109844

IF: 3.806

2023-05-01

Diamond and Related Materials

Abstract:The room temperature bonding of diamond and silicon wafers with Mo/Au nano-adhesive interlayers was realized in atmospheric air. The scanning acoustic microscopy and scanning electron microscopy analyzation results exhibit extremely low voidage and uniform intermediate layer at the heterointerface. The bonding strength was sufficiently high (7.78 MPa) so that fracture within silicon occurred in the tensile test. Additionally, the X-ray photoemission spectroscopy results also indicate that the fracture mainly occurred in bulk silicon, rather than Au/Au, Mo/Au, Mo/diamond and Mo/Si interfaces, demonstrating a stronger bonding strength than that of bulk Si. The TEM observations suggested that such strong bonding was attributed to atomic diffusion and grain growth across the Au/Au bonding interface and chemical reactions at Mo/Si and Mo/diamond interfaces. These results may provide an alternative approach for the combination of diamond and silicon.

materials science, multidisciplinary,physics, applied, condensed matter, coatings & films
Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

Jianbo Liang,Ayaka Kobayashi,Yasuo Shimizu,Yutaka Ohno,Seong-Woo Kim,Koji Koyama,Makoto Kasu,Yasuyoshi Nagai,Naoteru Shigekawa

DOI: https://doi.org/10.1002/adma.202104564

Abstract:The direct integration of gallium nitride (GaN) and diamond holds much promise for high-power devices. However, it is a big challenge to grow GaN on diamond due to the large lattice and thermal-expansion coefficient mismatch between GaN and diamond. In this work, the fabrication of a GaN/diamond heterointerface is successfully achieved by a surface activated bonding (SAB) method at room temperature. A small compressive stress exists in the GaN/diamond heterointerface, which is significantly smaller than that of the GaN-on-diamond structure with a transition layer formed by crystal growth. A 5.3 nm-thick intermediate layer composed of amorphous carbon and diamond is formed at the as-bonded heterointerface. Ga and N atoms are distributed in the intermediate layer by diffusion during the bonding process. Both the thickness and the sp2 -bonded carbon ratio of the intermediate layer decrease as the annealing temperature increases, which indicates that the amorphous carbon is directly converted into diamond after annealing. The diamond of the intermediate layer acts as a seed crystal. After annealing at 1000 °C, the thickness of the intermediate layer is decreased to approximately 1.5 nm, where lattice fringes of the diamond (220) plane are observed.
Low thermal boundary resistance at bonded GaN/diamond interface by controlling ultrathin heterogeneous amorphous layer

Bin Xu,Fengwen Mu,Yingzhou Liu,Rulei Guo,Shiqian Hu,Junichiro Shiomi

2024-04-24

Abstract:Thermal boundary resistance (TBR) in semiconductor-on-diamond structure bottlenecks efficient heat dissipation in electronic devices. In this study, to reduce the TBR between GaN and diamond, surface-activated bonding with a hybrid SiOx-Ar ion source was applied to achieve an ultrathin interfacial layer. The simultaneous surface activation and slow deposition of the SiOx binder layer enabled precise control over layer thickness (2.5-5.3 nm) and formation of an amorphous heterogeneous nanostructure comprising a SiOx region between two inter-diffusion regions. Crucially, the 2.5-nm-thick interfacial layer achieved a TBR of 8.3 m2-W/GW, a record low for direct-bonded GaN/diamond interface. A remarkable feature is that the TBR is extremely sensitive to the interfacial thickness; rapidly increasing to 34 m2-K/GW on doubling the thickness to 5.3 nm. Theoretical analysis revealed the origin of this increase: a diamond/SiOx interdiffusion layer extend the vibrational frequency, far-exceeding that of crystalline diamond, which increases the lattice vibrational mismatch and suppresses phonon transmission.

Materials Science
Room Temperature Electrical Bonding Technique Based on Titled Copper Nanowire Fastener with Anisotropic Adhesion Properties

Peng Wang,Yang Ju,Mingji Chen,Atsushi Hosoi,Yuanhui Song,Yuka Iwasaki

DOI: https://doi.org/10.7567/apex.6.035001

IF: 2.819

2013-01-01

Applied Physics Express

Abstract:This paper presented a room temperature bonding technique based on copper nanowire. A structure with copper nanowire array growing on the patterned areas of the silicon substrate was prepared through template-assistant electro-deposition. Through pressing the tilted and straight nanowire arrays against each other, the van der Waals interactions between the interconnected nanowires resulted in the mechanical bonding and electrical connectivity. This room temperature bonding technique exhibited anisotropic adhesion properties. The maximum adhesive strength of ~ 9.36 N/cm2 and electrical resistance of 0.3 Ω (areas, A~3.14 mm2) were obtained. Hence, it might have important implications for the assembly of components in the micro electronics.
Thermal effect of Nd:YAG bonded on diamond by Mo/Au metal intermediate layer at room temperature

Ningkang Deng,Yongfeng Qu,Jin Yuan,Wenbo Hu,Zhaoyang Zhang,Hongxing Wang

DOI: https://doi.org/10.1016/j.optmat.2023.114695

IF: 3.754

2023-12-10

Optical Materials

Abstract:To overcome the thermal effect of a Nd:yttrium aluminum garnet (YAG) disk, a polycrystalline diamond substrate is successfully bonded to the Nd:YAG disk using a Mo/Au interlayer at room temperature. The results show that the Nd:YAG disk and diamond are almost completely bonded, with some voids at the edge of the bonding layer. Scanning electron microscopy analysis shows that the bonding interface with a thickness of 143 nm is continuous and free of nanodefects. In addition, a numerical model is developed to analyze the thermodynamic properties of the Nd:YAG/diamond composite structure. The analytical results show that a diamond heat sink significantly reduces thermal aberration compared with Cu and SiC heat sinks. Furthermore, the bending optical path difference (OPD) is proved to be a major component of the total OPD. This study is expected to help realize diamond-based laser systems with high-power output.

materials science, multidisciplinary,optics
Demonstration of atmospheric plasma activated direct bonding of N-polar GaN and β-Ga 2 O 3 (001) substrates

Zhe (Ashley) Jian,Christopher J Clymore,Kai Sun,Umesh Mishra,Elaheh Ahmadi

DOI: https://doi.org/10.1063/5.0083556

IF: 4

2022-04-04

Applied Physics Letters

Abstract:Direct wafer bonding of β-Ga 2 O 3 and N-polar GaN at a low temperature was achieved by acid treatment and atmospheric plasma activation. The β-Ga 2 O 3 /GaN surfaces were atomically bonded without any loss in crystalline quality at the interface. The impact of post-annealing temperature on the quality of bonding interfaces was investigated. Post-annealing at temperatures higher than 700 °C increases the area of voids at bonded interfaces probably due to the difference in the coefficient of thermal expansion. The integration of β-Ga 2 O 3 on the GaN substrate achieved in this work is one of the promising approaches to combine the material merits of both GaN and Ga 2 O 3 targeting the fabrication of novel GaN/β-Ga 2 O 3 high-frequency and high-power electronics as well as optoelectronic devices.

physics, applied
Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices

Liwen Sang

DOI: https://doi.org/10.1080/26941112.2021.1980356

2021-01-02

Functional Diamond

Abstract:With the increasing power density and reduced size of the GaN-based electronic power converters, the heat dissipation in the devices becomes the key issue toward the real applications. Diamond, with the highest thermal conductivity among all the natural materials, is of the interest for integration with GaN to dissipate the generated heat from the channel of the AlGaN/GaN high electron mobility transistors (HEMTs). Current techniques involve three strategies to fabricate the GaN-on-diamond wafers: bonding of GaN with diamond, epitaxial growth of diamond on GaN, and epitaxial growth of GaN on diamond. As a result of the large lattice mismatch and thermal mismatch, the integration of GaN-on-diamond wafer is suffered from stress, bow, crack, rough interfaces, and large thermal boundary resistance. The interfaces with transition or buffer layers impede the heat flow from the device channel and greatly influence the device performance. In this review, we summarize the three different techniques to achieve the GaN-on-diamond wafers for the fabrication of AlGaN/GaN HEMTs. The problems and challenges of each method are discussed. In addition, the effective thermal boundary resistance between GaN and diamond, which characterizes the heat concentration, is analyzed with regard to different integration and measurement methods.
Polycrystalline Diamond Film Growth on Gallium Nitride with Low Boundary Thermal Resistance

Ying Wang,Jiahao Yao,Yong Yang,Qian Fan,Xianfeng Ni,Xing Gu

DOI: https://doi.org/10.3390/coatings14111457

IF: 3.236

2024-11-21

Coatings

Abstract:As the demand for high-frequency and high-power electronic devices has increased, gallium nitride (GaN), particularly in the context of high-electron mobility transistors (HEMTs), has attracted considerable attention. However, the 'self-heating effect' of GaN HEMTs represents a significant limitation regarding both performance and reliability. Diamond, renowned for its exceptional thermal conductivity, represents an optimal material for thermal management in HEMTs. This paper proposes a novel method for directly depositing diamond films onto N-polar GaN (NP-GaN) epitaxial layers. This eliminates the complexities of the traditional diamond growth process and the need for temporary substrate steps. Given the relative lag in the development of N-polar material growth technologies, which are marked by surface roughness issues, and the recognition that the thermal boundary resistance (TBRGaN/diamond) represents a critical factor constraining efficient heat transfer, our study has introduced a series of optimizations to enhance the quality of the diamond nucleation layer while ensuring that the integrity of the GaN buffer layer remains intact. Moreover, chemical mechanical polishing (CMP) technology was employed to effectively reduce the surface roughness of the NP-GaN base, thereby providing a more favorable foundation for diamond growth. The optimization trends observed in the thermal performance test results are encouraging. Integrating diamond films onto highly smooth NP-GaN epitaxial layers demonstrates a reduction in TBRGaN/diamond compared to that of diamond layers deposited onto NP-GaN with higher surface roughness that had undergone no prior process treatment.

materials science, multidisciplinary,physics, applied, coatings & films
Direct wafer bonding of Ga2O3–SiC at room temperature

Yang Xu,Fengwen Mu,Yinghui Wang,Dapeng Chen,Xin Ou,Tadatomo Suga

DOI: https://doi.org/10.1016/j.ceramint.2018.11.220

IF: 5.532

2019-04-01

Ceramics International

Abstract:Integration of Ga2O3 on SiC substrate with a high thermal conductivity is one of the promising solutions to reduce the self-heating of Ga2O3 devices. Direct wafer bonding of Ga2O3–SiC at room temperature was achieved by surface activated bonding (SAB) using a Si-containing Ar ion beam. An average bonding energy of ~2.31 J/m2 was achieved. Both the structure and the composition of the interface were investigated to understand the bonding mechanism. According to the interface analysis, a ~2.2 nm amorphous SiC layer and a ~1.8 nm amorphous β-Ga2O3 layer originating from the ion beam bombardment for surface activation were found at the interface. A slight diffusion at the interface might already happen at room temperature, which should contribute to the strong bonding. To confirm the diffusion at a low temperature and investigate the possible interfacial variation during device operation, an annealing process was carried out at 473 K. The same analysis was applied on the annealed bonding interface. The interfacial layer shrank by ~0.5 nm after annealing. The further diffusion of Ga and Si at the interface caused by the annealing was confirmed. Besides, the position of the Ar count peak inside the amorphous Ga2O3 layer shifted by ~0.5 nm toward SiC.

materials science, ceramics
Thermal stress modelling of diamond on GaN/III-Nitride membranes

Jerome A. Cuenca,Matthew D. Smith,Daniel E. Field,Fabien C-P. Massabuau,Soumen Mandal,James Pomeroy,David J. Wallis,Rachel A. Oliver,Iain Thayne,Martin Kuball,Oliver A. Williams

DOI: https://doi.org/10.1016/j.carbon.2020.11.067

IF: 10.9

2021-04-01

Carbon

Abstract:Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemical vapour deposition (CVD) of diamond directly onto a III-nitride (III–N) heterostructure membrane induces significant thermal stresses. In this work, these thermal stresses are investigated using an analytical approach, a numerical model and experimental validation. The thermal stresses are caused by the mismatch in the coefficient of thermal expansion (CTE) between the GaN/III-N stack, silicon (Si) and the diamond from room temperature to CVD growth temperatures. Simplified analytical wafer bow models underestimate the membrane bow for small sizes while numerical models replicate the stresses and bows with increased accuracy using temperature gradients. The largest tensile stress measured using Raman spectroscopy at room temperature was approximately 1.0 ± 0.2 GPa while surface profilometry shows membrane bows as large as 58 μm . This large bow is caused by additional stresses from the Si frame in the initial heating phase which are held in place by the diamond and highlights challenges for any device fabrication using contact lithography. However, the bow can be reduced if the membrane is pre-stressed to become flat at CVD temperatures. In this way, a sufficient platform to grow diamond on GaN/III-N structures without wafer bonding can be realised.

materials science, multidisciplinary,chemistry, physical
Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing process

Wang Qing,Liu Yang,Sun Yongjian,Tong Yuzhen,Zhang Guoyi

DOI: https://doi.org/10.1088/1674-4926/37/8/083001

2016-01-01

Journal of Semiconductors

Abstract:A new layer transfer technique which comprised double bonding and a step annealing process was utilized to transfer the GaN epilayer from a sapphire substrate to a Mo substrate. Combined with the application of the thermal-stable bonding medium, the resulting two-inch-diameter GaN template showed extremely good stability under high temperature and low stress state. Moreover, no cracks and winkles were observed. The transferred GaN template was suitable for homogeneous epitaxial, thus could be used for the direct fabrication of vertical LED chips as well as power electron devices. It has been confirmed that the double bonding and step annealing technique together with the thermal-stable bonding layer could significantly improve the bonding strength and stress relief, finally enhancing the thermal stability of the transferred GaN template.
Fabrication of low stress GaN-on-diamond structure via dual-sided diamond film deposition

Xin Jia,Junjun Wei,Yabo Huang,Siwu Shao,Kang An,Yuechan Kong,Jinglong Liu,Liangxian Chen,Chengming Li

DOI: https://doi.org/10.1007/s10853-020-05743-8

IF: 4.5

2021-01-12

Journal of Materials Science

Abstract:The fabrication of GaN-on-diamond structure by the process of diamond growth on GaN technology is becoming more and more attractive for high-power GaN devices. However, due to the high-temperature steps employed during the GaN epitaxial layer transfer process, significant stress accumulates in the GaN-on-diamond structure and induces the formation of cracks or deformations in the GaN layer. To improve the stress characteristics of the GaN layer, in this work, dual-sided diamond film deposition was carried out to accomplish the GaN-on-diamond structure. The surface morphology, interface microstructure and crystal quality of diamond on GaN were analyzed by using scanning electron microscopy, atomic force microscopy, transmission electron microscopy and X-ray diffraction. The results showed that the stress accumulation originating from the GaN epitaxial layer transfer process was effectively alleviated as compared with other reporteds in the literature and that the crystal quality of the GaN was only slightly altered. The stress relaxation was attributed to the low-quality diamond used as the temporary carrier during the GaN transfer process. In addition, a thin SiC transition layer in the interface is also beneficial in alleviating the mismatch between the coefficients of thermal expansion for the GaN and the diamond.

materials science, multidisciplinary
Electrical and Structural Analysis of β‐Ga2O3/GaN Wafer‐Bonded Heterojunctions with a ZnO Interlayer

Kai Sun,Stefan Kosanovic,Christopher J. Clymore,Umesh Mishra,Elaheh Ahmadi,Zhe (A.) Jian

DOI: https://doi.org/10.1002/aelm.202300174

IF: 6.2

2023-06-28

Advanced Electronic Materials

Abstract:ZnO is used as a glue layer to achieve high yield and uniformity in wafer bonding of β‐Ga2O3 and GaN. Post‐bonding annealing eliminates the barrier to electron flow from GaN to Ga2O3 and vice versa. The electrical and structural analysis of β‐Ga2O3/GaN wafer‐bonded heterojunctions with a ZnO interlayer shows promise for the development of novel electronic and optoelectronic devices. Wafer bonding of β‐Ga2O3 and N‐polar GaN single crystal substrates is demonstrated by adding ZnO as a "glue" interlayer. The wafers are fully bonded such that Newton rings are not observed. Temperature‐dependent current‐voltage (I–V) measurements are conducted on the as‐bonded Ga2O3/ZnO/N‐polar GaN test structure and after annealing at 600 °C and 1100 °C. The impact of post‐annealing temperature on the electrical and structural characteristics of the bonded samples is investigated. A consistently ohmic‐like characteristic is obtained by annealing the bonded wafers at 1100 °C in N2, which is in part due to crystallization of ZnO and diffusion of Ga into ZnO which makes it n‐type doped. The wafer bonding of β‐Ga2O3 and GaN achieved in this work is promising to combine the material merits of both GaN and Ga2O3 targeting breakthrough high‐frequency and high‐power device performances.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Reduced thermal boundary conductance in GaN-based electronic devices introduced by metal bonding layer

Susu Yang,Houfu Song,Yan Peng,Lu Zhao,Yuzhen Tong,Feiyu Kang,Mingsheng Xu,Bo Sun,Xinqiang Wang

DOI: https://doi.org/10.1007/s12274-021-3658-7

IF: 9.9

2021-07-08

Nano Research

Abstract:Achieving high interface thermal conductance is one of the biggest challenges in the nanoscale heat transport of GaN-based devices such as light emitting diodes (LEDs), and high electron mobility transistors (HEMTs). In this work, we experimentally measured thermal boundary conductance (TBC) at interfaces between GaN and the substrates with AuSn alloy as a commonly-used adhesive layer by time-domain thermoreflectance (TDTR). We find that the TBCs of GaN/Ti/AuSn/Ti/Si, GaN/Ti/AuSn/Ti/SiC, and GaN/Ti/AuSn/Ti/diamond, are 16.5, 14.8, and 13.2 MW·m−2·K−1 at room temperature, respectively. Our measured results show that the TBC of GaN/Ti/AuSn/Ti/SiC interface is inferior to the TBC of pristine GaN/SiC interface, due to the large mismatch of phonon modes between AuSn/Ti and substrates, shown as the difference of Debye temperature of two materials. Overall, we measured the TBC at interface between GaN and thermal conductive substrates, and provided a guideline for designing the interface between GaN and substrate at HEMT from a thermal management point of view. 

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications

Jianbo Liang,Yuji Nakamura,Tianzhuo Zhan,Yutaka Ohno,Yasuo Shimizu,Kazu Katayama,Takanobu Watanabe,Hideto Yoshida,Yasuyoshi Nagai,Hongxing Wang,Makoto Kasu,Naoteru Shigekawa

DOI: https://doi.org/10.1016/j.diamond.2020.108207

IF: 3.806

2021-01-01

Diamond and Related Materials

Abstract:The direct integrating of GaAs and diamond is achieved at room temperature via a surface activated bonding method. An ultrathin crystal defect layer composed of GaAs and diamond was formed at the bonding interface. The thickness of the GaAs and diamond crystal defect layers was determined to be 0.4 and 1.6 nm, respectively. After annealing at 400 °C, no changes were observed in the thickness of the crystal defect layer and the interfacial structure. The thermal characterization of the transmission line model (TLM) patterns formed on the GaAs layer bonded to diamond and sapphire substrates is demonstrated. The thermal resistance of the GaAs TLM patterns formed on the diamond and sapphire substrates was determined to be 6 and 34.9 K/W, respectively. The GaAs TLM patterns formed on the diamond showed an excellent heat dissipation property due to the high thermal conductivity of diamond.

materials science, multidisciplinary,physics, applied, condensed matter, coatings & films
High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC Interfaces

Fengwen Mu,Zhe Cheng,Jingjing Shi,Seongbin Shin,Bin Xu,Junichiro Shiomi,Samuel Graham,Tadatomo Suga

DOI: https://doi.org/10.48550/arXiv.1905.04171

2019-05-10

Abstract:GaN-based HEMTs have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced by near-junction Joule-heating, which degrades device performance and reliability. Increasing the TBC between GaN and SiC will aid in the heat dissipation of GaN-on-SiC power devices, taking advantage of the high thermal conductivity of the SiC substrate. However, a good understanding of the TBC of this technically important interface is still lacking due to the complicated nature of interfacial heat transport. In this work, a lattice-mismatch-insensitive surface activated bonding method is used to bond GaN directly to SiC and thus eliminating the AlN layer altogether. This allows for the direct integration of high quality GaN layers with SiC to create a high thermal boundary conductance interface. TDTR is used to measure the thermal properties of the GaN thermal conductivity and GaN-SiC TBC. The measured GaN thermal conductivity is larger than that of GaN grown by MBE on SiC, showing the impact of reducing the dislocations in the GaN near the interface. High GaN-SiC TBC is observed for the bonded GaN-SiC interfaces, especially for the annealed interface whose TBC (230 MW/m2-K) is close to the highest values ever reported. To understand the structure-thermal property relation, STEM and EELS are used to characterize the interface structure. The results show that, for the as-bonded sample, there exists an amorphous layer near the interface for the as bonded samples. This amorphous layer is crystallized upon annealing, leading to the high TBC found in our work. Our work paves the way for thermal transport across bonded interfaces, which will impact real-world applications of semiconductor integration and packaging.

Applied Physics,Materials Science
Wafer-scale bonded GaN–AlN with high interface thermal conductance

Man Li,Kaicheng Pan,Yijun Ge,Kenny Huynh,Mark S. Goorsky,Timothy S. Fisher,Yongjie Hu

DOI: https://doi.org/10.1063/5.0206263

IF: 4

2024-07-15

Applied Physics Letters

Abstract:Wide and ultrawide bandgap semiconductors, such as GaN, play a crucial role in high-power applications, yet their performance is often constrained by thermal management challenges. In this work, we introduce a high-quality interface between GaN and AlN, prepared through wafer-scale bonding and verified via high-resolution transmission electron microscopy and transport experiments. We experimentally measured the thermal boundary conductance of the GaN–AlN interface, achieving up to 320 MW/m2K at room temperature using an ultrafast optical technique and sensitivity examinations. Non-equilibrium atomistic Green's functions and density functional theory simulations were conducted to model the interface phonon modes and their contributions to thermal transport, demonstrating good agreement with the experimental results from 80 to 300 K. Additionally, we observed a size-dependent effect on the thermal boundary conductance related to the GaN film thickness from 180 to 450 nm, which we attributed to quasi-ballistic thermal transport through molecular dynamics simulations. Our study has demonstrated a scalable processing route for wafer-sized chip packaging and provides fundamental insights to mitigate near-junction thermal resistance. Further exploration of interface engineering could facilitate co-design strategies to advanced thermal management technologies.

physics, applied

Room temperature bonding of GaN on diamond by using Mo/Au nano-adhesion layer

Investigation on the bonding quality of GaN and Si wafers bonded with Mo/Au nano-layer in atmospheric air

Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices

A Novel Strategy for GaN-on-Diamond Device with a High Thermal Boundary Conductance

Room temperature bonding of diamond/Si with Mo/Au interlayers in atmospheric air

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

Low thermal boundary resistance at bonded GaN/diamond interface by controlling ultrathin heterogeneous amorphous layer

Room Temperature Electrical Bonding Technique Based on Titled Copper Nanowire Fastener with Anisotropic Adhesion Properties

Thermal effect of Nd:YAG bonded on diamond by Mo/Au metal intermediate layer at room temperature

Demonstration of atmospheric plasma activated direct bonding of N-polar GaN and β-Ga 2 O 3 (001) substrates

Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices

Polycrystalline Diamond Film Growth on Gallium Nitride with Low Boundary Thermal Resistance

Direct wafer bonding of Ga2O3–SiC at room temperature

Thermal stress modelling of diamond on GaN/III-Nitride membranes

Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing process

Fabrication of low stress GaN-on-diamond structure via dual-sided diamond film deposition

Electrical and Structural Analysis of β‐Ga2O3/GaN Wafer‐Bonded Heterojunctions with a ZnO Interlayer

Reduced thermal boundary conductance in GaN-based electronic devices introduced by metal bonding layer

Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications

High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC Interfaces

Wafer-scale bonded GaN–AlN with high interface thermal conductance