Fast response 2D semiconductor gas sensor for memory-type NO 2 detection: Test system construction, performance evaluation, and mechanism study
Mingyang Gao,Qianqian Ren,Zexuan Wang,Simeng Wang,Tengge Ning,Xiaolong Ma,Chunxue Zhai,Zhiyong Zhang,Qiang Li,Wu Zhao
DOI: https://doi.org/10.1016/j.mssp.2024.108249
IF: 4.1
2024-02-20
Materials Science in Semiconductor Processing
Abstract:Two-dimensional (2D) materials, such as those in the graphene family, tin-selenide, and transition metal sulfides (TMDs), hold great promise for various applications, including gas-sensitive devices, photodetectors, and lithium batteries. In this study, we propose a fast response gas sensor for ppb-level nitrogen dioxide (NO 2 ) detection using two-dimensional (2D) semiconductor molybdenum disulfide (MoS 2 ). Firstly, we have constructed a gas-sensitive test system to evaluate the performance of the device. The test results demonstrate that the constructed device responds significantly to gas concentrations as low as 40 ppb and as high as 10 ppm, with a fast response time of around 8 s. We have also analyzed and explained the relevant mechanism of the response to NO 2 . By providing detailed insights into the construction and performance analysis of the test system, as well as the related mechanism study, our research offers valuable information for the development of fast response memory-type gas sensors for ppb-level NO 2 detection.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied