A 0.78mW Inductor-less 21GHZ CML frequency divider in 65nm CMOS

Yang Zhang,Zhiping Wen,Xunping Hou
DOI: https://doi.org/10.1109/ITNEC.2019.8729400
2019-01-01
Abstract:A high-speed frequency divider circuit used in the phase-locked loop of the RF transceiver is designed in 65nm CMOS process with a supply voltage of 1.3V. The designed frequency divider circuit improves and optimizes the traditional pseudo-differential structure to achieve a frequency division range of 0.5-21.5 GHz at an input signal peak of 400 mV, and passes all process corner and temperature simulations. A symmetrical structure is used on the layout of the circuit layout and the connection distance is reduced as much as possible. The layout size is only 23.5um×17.3 um. When the power supply voltage is 1.3V, the operating current is 601.9uA, and the DC power consumption is 0.78mW.
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