Intermediate Phase Halide Exchange Strategy toward a High-Quality, Thick CsPbBr 3 Film for Optoelectronic Applications.

Weidong Zhu,Minyu Deng,Zeyang Zhang,Dazheng Chen,He Xi,Jingjing Chang,Jincheng Zhang,Chunfu Zhang,Yue Hao
DOI: https://doi.org/10.1021/acsami.9b06427
IF: 9.5
2019-01-01
ACS Applied Materials & Interfaces
Abstract:Inorganic halide perovskite CsPbBr3 is emerging as one of promising alternatives to the hybrid counterparts for optoelectronic applications, owing to its upgraded stability. Yet, the inherently low solubility of CsBr precursor material restricts the quality and especially the thickness of solution-processed CsPbBr3 film, thus hindering the further optimization of device performance. Herein, we report a facile intermediate phase halide exchange reaction that can break the thickness limit of solution-processed CsPbBr3 film, since it avoids use of low-solubility CsBr. Furthermore, the CH3NH3I by-product after halide exchange could trigger a beneficial Ostwald ripening process to promote grains coarsening in the film. Hence, the uniformly-flat, pure-phase, and compact CsPbBr3 film composed of [100] preferential, micro-sized grains can be achieved. As a demonstration of its excellent optoelectronic features, the carbon-based, all-inorganic photodetector with such favorable film yields a maximum photoresponsivity of 0.35 A W-1 and a specific detectivity of 1.94×1013 Jones coupled with a response time of 0.58 μs.
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