Abstract:A much stronger interfacial gating effect was observed in the graphene/HfO2/Si photodetector when compared with that in the graphene/SiO2/Si photodetector. We found that this improvement was due to the higher interface state density at the HfO2/Si interface and the higher dielectric constant of the HfO2 layer. The photoresponsivity of the graphene/HfO2/Si photodetector is as high as 45.8 A W-1. Germanium and amorphous MoS2 (a-MoS2) were used to prepare graphene/HfO2/Ge and graphene/HfO2/a-MoS2 photodetectors, further demonstrating the high efficiency of the interfacial gating mechanism for photodetection. Because of the 0.196 eV bandgap of a-MoS2, which was verified in our previous report, the graphene/HfO2/a-MoS2 photodetector realized ultrabroadband photodetection over the range from 473 nm (visible) to 2712 nm (mid-infrared) at room temperature with photoresponsivity as high as 5.36 A W-1 and response time as fast as 68 μs, which represent significant improvements from the corresponding properties of the pure a-MoS2 photodetectors in our previous report and are comparable with those of state-of-the-art broadband photodetectors. By taking full advantage of the interfacial gating mechanism, a fast response, high photoresponsivity and ultrabroadband photodetection were achieved simultaneously. These interfacial gated graphene photodetectors also offer simple fabrication and full semiconductor process compatibility. The advantages described here indicate that the proposed photodetectors have significant potential for use in electronic and optoelectronic applications and offer a new path toward the development of ultrabroadband photodetectors.

Opening the Band Gap of Graphene Via Fluorination for High-Performance Dual-Mode Photodetector Application.

Graphene Hybrid Structures for Integrated and Flexible Optoelectronics.

A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector.

A Broadband Fluorographene Photodetector.

Interfacial Gated Graphene Photodetector with Broadband Response

Self-Driven Ultrafast Response Photodetector Based on Graphene/Water/Silicon Structure

Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

Fabrication and photoelectric properties of a graphene-silicon nanowire heterojunction on a flexible polytetrafluoroethylene substrate

Graphene photodetectors integrated with silicon and perovskite quantum dots

High and Fast Response of a Graphene–Silicon Photodetector Coupled with 2D Fractal Platinum Nanoparticles

High Detectivity Graphene/si Heterostructure Photodetector with a Single Hydrogenated Graphene Atomic Interlayer for Passivation and Carrier Tunneling.

Broadband and High-Performance SnS2/FePS3/graphene Van Der Waals Heterojunction Photodetector

Metamaterial Grating-Integrated Graphene Photodetector with Broadband High Responsivity

High-responsivity graphene/hyperdoped-silicon heterostructure infrared photodetectors

Broadband and high-performance SnS 2 /FePS 3 /graphene van der Waals heterojunction photodetector

High‐Performance SiC/Graphene UV‐Visible Band Photodetectors with Grating Structure and Asymmetrical Electrodes for Optoelectronic Logic Gate

High-performance broadband graphene/silicon/graphene photodetectors: From x-ray to near-infrared

High-performance graphene/n-Si hybrid photodetector toward self-driven optical communications

Performance Improvement of Graphene/Silicon Photodetectors Using High Work Function Metal Nanoparticles with Plasma Effect

Remarkable Noise Reduction in High-Stability Self-Powered Doped Graphene/Si-Quantum Dot Broadband Photodetectors by Using Graphene Quantum Dots as an Interlayer

Resonant nanocavity-enhanced graphene photodetectors on reflecting silicon-on-insulator wafers