Abstract:In recent years, semiconductor-based surface-enhanced Raman scattering (SERS) substrates have received considerable attention and led to a forefront in the SERS field. However, the lack of electromagnetic (EM) enhancement contributions highly precludes the development of semiconductive-substrate-based SERS. In this study, Ga-doped ZnO nanoparticles (NPs) were fabricated and employed as novel SERS substrates based on the EM enhancement contribution of surface plasmon resonance (SPR). The obtained Ga-doped ZnO NPs exhibited obvious SPR absorptions in the visible and near- and mid-infrared regions. SPR absorption can be readily tuned by changing the doping ratios of Ga3+ ions. The SERS spectra of Ga-doped ZnO/4-mercaptopyridine (MPy) were investigated at different excitation wavelengths of 488, 532, 633, and 785 nm. The spectral enhancement of Ga-doped ZnO substrates depended on the doping ratios, excitation wavelengths, and nearby SPR absorption. Ga-doped ZnO NPs with the highest free charge carrier density and the doping ratio of 5% showed the strongest SERS spectra. For the fixed doping ratio of 5%, the better is the match between excitation wavelengths and SPR absorption, the higher is the SERS spectral enhancement. This study showed the feasibility of EM contributions to SERS by using semiconductive substrates and can contribute to the development of the semiconductor-based EM mechanism.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c05804?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c05804</a>.Raman spectra of GaχZn1–χO NPs, UPS and the UV–vis absorption spectra of the GaχZn1-χO (χ = 0) NPs, ρCT of GaχZn1–χO/MPy complexes under the excitation lines of 785, 633, 532, and 488 nm, and the EF calculation details (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c05804/suppl_file/am1c05804_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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