In situ study of crystal plane-dependent interfacial structural transformation in AgBiS 2
Haohan Fan,Jiang Cheng,Xiang Meng,Feifei Xiang,Shuai Wang,Yongchao Zhang,Feng Cheng,Binghui Ge
DOI: https://doi.org/10.1016/j.jmrt.2024.02.033
IF: 6.267
2024-02-12
Journal of Materials Research and Technology
Abstract:The compound AgBiS 2 , a ternary sulfide, has gained significant attention in the field of photovoltaics due to its characteristic properties of being non-toxic, low-cost, and highly efficient. However, due to the instability of its grain boundaries, the structure of the AgBiS 2 may be transformed at high temperatures, consequently influencing the lifetime of devices utilizing this material. In this study, the mechanism of interfacial structural transition and the factors affecting the stability of AgBiS 2 were investigated by in-situ transmission electron microscopy. Our observations revealed that, under high-temperature conditions, the structure of the material changes with the formation of triangular hole-like defects at the AgBiS 2 interface, which is directly related to the movement of defects. Furthermore, the surface energy of the AgBiS 2 crystal planes is different due to different atomic arrangements. Combining the experiments with theoretical calculations, we found that the defects such as dislocations tend to cluster on the high-energy plane (111), thereby leading to localized stress and strain concentration. Then, the structure transforms by reconstructing its interfacial atoms to reduce the local stress. Of note, this reconstruction leads to the formation of triangular hole-like defects, consequently reducing the overall energy of the system.
materials science, multidisciplinary,metallurgy & metallurgical engineering