A High-Performance Near-Infrared Light Photovoltaic Detector Based on a Multilayered PtSe2/Ge Heterojunction

Li Wang,Jing-Jing Li,Qi Fan,Zheng-Feng Huang,Ying-Chun Lu,Chao Xie,Chun-Yan Wu,Lin-Bao Luo

DOI: https://doi.org/10.1039/c9tc00797k

IF: 6.4

2019-01-01

Journal of Materials Chemistry C

Abstract:Light detection in the near-infrared (NIR) region is of particular importance due to its wide application for both military and civil purposes.

What problem does this paper attempt to address?

Hybrid Dirac Semimetal-Based Photodetector with Efficient Low-Energy Photon Harvesting

Lin Wang,Li Han,Wanlong Guo,Libo Zhang,Chenyu Yao,Zhiqingzi Chen,Yulu Chen,Cheng Guo,Kaixuan Zhang,Chia-Nung Kuo,Chin Shan Lue,Antonio Politano,Huaizhong Xing,Mengjie Jiang,Xianbin Yu,Xiaoshuang Chen,Wei Lu

DOI: https://doi.org/10.1038/s41377-022-00741-8

2022-01-01

Light Science & Applications

Abstract:Despite the considerable effort, fast and highly sensitive photodetection is not widely available at the low-photon-energy range (~meV) of the electromagnetic spectrum, owing to the challenging light funneling into small active areas with efficient conversion into an electrical signal. Here, we provide an alternative strategy by efficiently integrating and manipulating at the nanoscale the optoelectronic properties of topological Dirac semimetal PtSe 2 and its van der Waals heterostructures. Explicitly, we realize strong plasmonic antenna coupling to semimetal states near the skin-depth regime (λ/10 4 ), featuring colossal photoresponse by in-plane symmetry breaking. The observed spontaneous and polarization-sensitive photocurrent are correlated to strong coupling with the nonequilibrium states in PtSe 2 Dirac semimetal, yielding efficient light absorption in the photon range below 1.24 meV with responsivity exceeding ∼0.2 A/W and noise-equivalent power (NEP) less than ~38 pW/Hz 0.5 , as well as superb ambient stability. Present results pave the way to efficient engineering of a topological semimetal for high-speed and low-energy photon harvesting in areas such as biomedical imaging, remote sensing or security applications.
High-performance Near-Infrared PtSe2/n-Ge Heterojunction Photodetector with Ultrathin Al2O3 Passivation Interlayer

Qinghai Zhu,Yexin Chen,Xiaodong Zhu,Yijun Sun,Zhiyuan Cheng,Jing Xu,Mingsheng Xu

DOI: https://doi.org/10.1007/s40843-022-2402-3

2023-01-01

Science China Materials

Abstract:Two-dimensional (2D) materials are being intensively exploited for broadband-responsive photodetectors (PDs). However, the broadband-responsive PDs based on 2D materials normally suffer from poor response to infrared wavelengths. Here, we report the excellent photoresponse performance of vertical PtSe2/ultrathin Al2O3/Ge PD under near-infrared illumination. We directly selenize Pt film deposited on Al2O3/Ge to form PtSe2 layer. The ultrathin Al2O3 passivation layer plays the role of surface modification, effectively weakening recombination of the photogenerated carriers. Under 1550-nm illumination, the PtSe2/ultrathin Al2O3/Ge PD with a working area of 50 µm × 50 µm at zero bias obtains a large responsivity of 4.09 A W−1, and fast rise/fall times of 32.6/18.9 µs, respectively. And under an external electric field of −5 V, the responsivity and response speed of the PtSe2/ultrathin Al2O3/Ge PD can be as high as 38.18 A W−1 and as fast as 9.6/7.7 µs, respectively. We find that the working area has a great influence on the photoresponse characteristics. Furthermore, we demonstrate the PtSe2/ultrathin Al2O3/Ge PDs array shows outstanding violet, visible, and infrared imaging capability at room temperature. Our study suggests that the PtSe2/ultrathin Al2O3/Ge heterojunction has great application prospects for the design of emerging broadband optoelectronic devices with superior performance for near-infrared response.
PtSe2/InP Mixed‐Dimensional Schottky Junction for High‐Performance Self‐Powered Near‐Infrared Photodetection

Jiang Wang,Can Fu,Mengting Jiang,Yi Hu,Yuanda Liu,Meng‐Lei Zhu,Jie Yu,Jichao Fu,Ronghui Lin,Di Wu,Zackaria Mahfoud,Sim Ai Jia,Feng‐Xia Liang,Li Li,Jinghua Teng,Lin‐Bao Luo

DOI: https://doi.org/10.1002/adom.202401035

IF: 9

2024-06-22

Advanced Optical Materials

Abstract:This work presents a high‐performance PtSe2/InP Schottky junction self‐powered NIR photodetector with an ultralow dark current of 45 pA. The responsivity and detectivity under NIR illumination reach up to 0.718 A W−1 and 4.37 × 1012 Jones, respectively. Theoretical simulations reveal the electric field distribution at the device interface and its photoresponse mechanism. Self‐powered near‐infrared (NIR) photodetectors utilizing low‐dimensional materials are promising owing to their low‐power‐consumption and superior photoresponse performance. The strong light‐matter interaction and other intriguing physical mechanisms (such as high mobility, dangling‐bond‐free surface) in 2D semiconductor materials, combined with the flexible fabrication of device structures, create new opportunities for the optoelectronic devices. Here, a self‐powered NIR Schottky junction photodetector is demonstrated by vertically stacking 2D PtSe2 film atop an InP wafer. The strong built‐in electric field formed at PtSe2/InP interface endows the device with self‐powered operation with an ultralow dark current of 45 pA at room temperature under 0 V bias. The responsivity and detectivity at 940 nm illumination reach up to 0.718 A W−1 and 4.37 × 1012 Jones, respectively. Furthermore, TCAD simulations showed that the significant electric field at the PtSe2/InP interface is pivotal for its superior self‐powered detection performance. Remarkably, the device achieves a high Ilight/Idark ratio exceeding 105 and a fast response time of 4.35/5.66 μs, and sensitivity to NIR light polarization. This study provides a new perspective for the integration of hybrid 2D materials with 3D semiconductors in the next‐generation optoelectronic devices and integrated systems.

materials science, multidisciplinary,optics
Fabrication Of Pdse2/Gaas Heterojunction For Sensitive Near-Infrared Photovoltaic Detector And Image Sensor Application

Lin-bao Luo,Xiu-xing Zhang,Chen Li,Jia-xiang Li,Xing-yuan Zhao,Zhi-xiang Zhang,Hong-yun Chen,Di Wu,Feng-xia Liang

DOI: https://doi.org/10.1063/1674-0068/cjcp2005066

IF: 1.09

2020-01-01

Chinese Journal of Chemical Physics

Abstract:In this study, we have developed a high-sensitivity, near-infrared photodetector based on PdSe2/GaAs heterojunction, which was made by transferring a multilayered PdSe2 film onto a planar GaAs. The as-fabricated PdSe2/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination, indicating that the near-infrared photodetector can be used as a self-driven device without external power supply. Further device analysis showed that the hybrid heterojunction exhibited a high on/off ratio of 1.16x10(5) measured at 808 nm under zero bias voltage. The responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36x10(11) Jones, respectively. Moreover, the device showed excellent stability and reliable repeatability. After 2 months, the photoelectric characteristics of the near-infrared photodetector hardly degrade in air, attributable to the good stability of the PdSe2. Finally, the PdSe2/GaAs-based heterojunction device can also function as a near-infrared light sensor.
Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

Jianghong Wu,Zhenwei Yang,Caiyu Qiu,Yuejiao Zhang,Zhiqian Wu,Jingliang Yang,Yanghua Lu,Jianfeng Li,Dongxiao Yang,Ran Hao,Erping Li,Geliang Yu,Shisheng Lin

DOI: https://doi.org/10.1039/c8nr00594j

IF: 6.7

2018-01-01

Nanoscale

Abstract:Near-infrared photodetectors (NIRPDs) have attracted great attention because of their wide range of applications in many fields. Herein, a novel self-driven NIRPD at the wavelength of 980 nm is reported based on the graphene/GaAs heterostructure. Extraordinarily, its sensitivity to light illumination (980 nm) is far beyond the absorption limitation of GaAs (874 nm). This means that the photocurrent originates from the separation of photo-induced carriers in graphene, which is caused by the vertically built-in electric field formed through the high quality van der Waals contact between graphene and GaAs. Moreover, after introducing NaYF4:Yb3+/Er3+ upconversion nanoparticles (UCNPs) onto the graphene/GaAs heterojunction, the responsivity increases to be as superior as 5.97 mA W-1 and the corresponding detectivity is 1.1 × 1011 cm Hz0.5 W-1 under self-driven conditions. This dramatic improvement is mainly ascribed to the radiative energy transfer from UCNPs to the graphene/GaAs heterostructure. The high-quality and self-driven UCNPs/graphene/GaAs heterostructure NIRPD holds significant potential for practical application in low-consumption and large-scale optoelectronic devices.
High-performance Broadband Photodetector Based on PtSe 2 /mos 2 Heterojunction from Visible to Near-Infrared Region

Bin Wang,Jian Yuan,Mengqi Che,Mingxiu Liu,Yuting Zou,Junru An,Fan Tan,Yaru Shi,Nan Zhang,Liujian Qi,Shaojuan Li

DOI: https://doi.org/10.1007/s11432-023-3812-1

2024-01-01

Abstract:Broadband photodetectors based on narrow bandgap 2D materials have garnered considerable interest for application in the field of optoelectronic devices. However, their large dark current hinders device performance. In this work, a PtSe 2 /MoS 2 heterojunction was fabricated for a broadband photodetector operating within the range of visible to near-infrared. The device exhibited suppressed dark currents with a high rectification ratio of 10 4 . The built-in electric field of the heterojunction promoted carrier separation effectively, and the device achieved excellent photoelectric performance with responsivities of 1.7 × 10 3 , 27.52, and 21 mA/W at 635, 785, and 1550 nm wavelengths, respectively. Moreover, the specific detectivities ( D *) were 2.2 × 10 13 Jones (635 nm), 3.55 × 10 11 Jones (785 nm), and 2.72 × 10 8 Jones (1550 nm). The device demonstrated a rise/fall time of 131/241 µs under 1550 nm laser illumination. Visible and near-infrared imaging detection was also demonstrated based on the heterojunction device at room temperature. This work sheds light on the remarkable potential of PtSe 2 /MoS 2 heterojunctions in the domain of high-performance broadband photodetectors.
Multilayered PtSe2/pyramid-Si Heterostructure Array with Light Confinement Effect for High-Performance Photodetection, Image Sensing and Light Trajectory Tracking Applications

Mengru Ma,Huahan Chen,Kunnan Zhou,Chao Xie,Yi Liang,Li Wang,Chunyan Wu,Wenhua Yang,Jiawen Guo,Linbao Luo

DOI: https://doi.org/10.1039/d0tc05701k

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:A multilayered PtSe2/pyramid-Si heterostructure-based photodetector array consisting of 8×8 device units shows excellent optoelectrical performance with potential applications in NIR image sensing and real-time light trajectory tracking.
Quasi-2D Perovskite Antireflection Coating Boosting the Performance of Multilayered PdTe2/Ge Heterostructure-Based Near-Infrared Photodetectors

Xianpeng Zhong,Huahan Chen,Chao Xie,Yi Liang,Linbao Luo,Wenhua Yang,Chun-yan Wu

DOI: https://doi.org/10.1039/d2tc00438k

IF: 6.4

Journal of Materials Chemistry C

Abstract:A hybrid heterostructure composed of two-dimensional (2D) material/narrow bandgap semiconductor represents a promising platform for designing highly efficient and cost-effective near infrared (NIR) photodetectors. However, performance enhancement is usually restricted...

Materials Science,Physics
Design of 2D Layered PtSe2 Heterojunction for the High-Performance, Room-Temperature, Broadband, Infrared Photodetector

Y. Tsang,Di Wu,Cheng Jia,Zhifeng Shi,Longhui Zeng,E. Wu,Tingting Xu,Xinjian Li,Yuange Wang,Yongtao Tian

DOI: https://doi.org/10.1021/ACSPHOTONICS.8B00853

IF: 7

2018-08-27

ACS Photonics

Abstract:The rich variety and attractive properties of two-dimensional (2D) layered nanomaterials provide an ideal platform for fabricating next generation of advanced optoelectronic devices. Recently, a newly discovered 2D layered PtSe2 thin film has exhibited outstanding broadband sensitivity and optoelectronic properties. In our work, a large-area 2D layered PtSe2 thin film was used to construct the PtSe2/CdTe heterojunction infrared photodetector (PD). This PD exhibited a broad detection range coverage from 200 to 2000 nm with a high responsivity of 506.5 mA/W, a high specific detectivity of 4.2 × 1011 Jones, a high current on/off ratio of 7 × 106, and a fast response speed of 8.1/43.6 μs at room temperature. Additionally, the PtSe2/CdTe heterojunction PD exhibits excellent repeatability and stability in air. The high-performance of the PtSe2/CdTe heterojunction PD demonstrated in this work reveals that it has great potential to be used for broadband infrared detection.

Engineering,Materials Science,Physics
Near‐Infrared Light Photovoltaic Detector Based on GaAs Nanocone Array/Monolayer Graphene Schottky Junction

Lin-Bao Luo,Jing-Jing Chen,Ming-Zheng Wang,Han Hu,Chun-Yan Wu,Qiang Li,Li Wang,Jian-An Huang,Feng-Xia Liang

DOI: https://doi.org/10.1002/adfm.201303368

IF: 19

2014-01-01

Advanced Functional Materials

Abstract:Near infrared light photodiodes have been attracting increasing research interest due to their wide application in various fields. In this study, the fabrication of a new n‐type GaAs nanocone (GaAsNCs) array/monolayer graphene (MLG) Schottky junction is reported for NIR light detection. The NIR photodetector (NIRPD) shows obvious rectifying behavior with a turn‐on voltage of 0.6 V. Further device analysis reveals that the photovoltaic NIRPDs are highly sensitive to 850 nm light illumination, with a fast response speed and good spectral selectivity at zero bias voltage. It is also revealed that the NIRPD is capable of monitoring high‐switching frequency optical signals (∼2000 Hz) with a high relative balance. Theoretical simulations based on finite difference time domain (FDTD) analysis finds that the high device performance is partially associated with the optical property, which can trap most incident photons in an efficient way. It is expected that such a self‐driven NIRPD will have potential application in future optoelectronic devices.
High-performance broadband photodetector based on PtSe2/MoS2 heterojunction from visible to near-infrared region

Bin Wang,Jian Yuan,Mengqi Che,Mingxiu Liu,Yuting Zou,Junru An,Fan Tan,Yaru Shi,Nan Zhang,Liujian Qi,Shaojuan Li

DOI: https://doi.org/10.1007/s11432-023-3812-1

2024-02-22

Science China Information Sciences

Abstract:Broadband photodetectors based on narrow bandgap 2D materials have garnered considerable interest for application in the field of optoelectronic devices. However, their large dark current hinders device performance. In this work, a PtSe 2 /MoS 2 heterojunction was fabricated for a broadband photodetector operating within the range of visible to near-infrared. The device exhibited suppressed dark currents with a high rectification ratio of 10 4 . The built-in electric field of the heterojunction promoted carrier separation effectively, and the device achieved excellent photoelectric performance with responsivities of 1.7 × 10 3 , 27.52, and 21 mA/W at 635, 785, and 1550 nm wavelengths, respectively. Moreover, the specific detectivities ( D *) were 2.2 × 10 13 Jones (635 nm), 3.55 × 10 11 Jones (785 nm), and 2.72 × 10 8 Jones (1550 nm). The device demonstrated a rise/fall time of 131/241 μs under 1550 nm laser illumination. Visible and near-infrared imaging detection was also demonstrated based on the heterojunction device at room temperature. This work sheds light on the remarkable potential of PtSe 2 /MoS 2 heterojunctions in the domain of high-performance broadband photodetectors.

computer science, information systems,engineering, electrical & electronic
Multilayered PtSe 2 /pyramid-Si heterostructure array with light confinement effect for high-performance photodetection, image sensing and light trajectory tracking applications

Mengru Ma,Huahan Chen,Kunnan Zhou,Chao Xie,Yi Liang,Li Wang,Chunyan Wu,Wenhua Yang,Jiawen Guo,Linbao Luo

DOI: https://doi.org/10.1039/d0tc05701k

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:A multilayered PtSe 2 /pyramid-Si heterostructure-based photodetector array consisting of 8×8 device units shows excellent optoelectrical performance with potential applications in NIR image sensing and real-time light trajectory tracking.

materials science, multidisciplinary,physics, applied
Design of Self-Powered 2D Te/PtSe2 Heterojunction for Room-Temperature NIR Detection

Fengtian Xia,Dongbo Wang,Donghao Liu,Sihang Liu,Wen He,Xiangqun Chen,Liancheng Zhao,Lihua Liu,Xuan Fang,Shujie Jiao,chenchen zhao,bingke Zhang,Jingwen Pan,Dan Fang

DOI: https://doi.org/10.1039/d4tc04034a

IF: 6.4

2024-01-01

Journal of Materials Chemistry C

Abstract:The advent of two-dimensional (2D) materials with exceptional properties has opened avenues for the development of high-performance infrared (IR) detectors through innovative approaches. Nevertheless, the intricate preparation procedures have constrained...
Infrared Photovoltaic Detector Based on P-Gete/n-si Heterojunction.

Yiqun Zhao,Libin Tang,Shengyi Yang,Shu Ping Lau,Kar Seng Teng

DOI: https://doi.org/10.1186/s11671-020-03336-7

2020-01-01

Abstract:GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 x 10(11)Jones at 850 nm light irradiation at room temperature was demonstrated.
Construction of PtSe2/Ge heterostructure-based short-wavelength infrared photodetector array for image sensing and optical communication applications.

L. Luo,Chenhao Xu,Chao Xie,Jie Ding,Wenbin Li,Xinyi Shen,Yu Lu,Yue Wang,Wanying Zhou,Zipeng Qin

DOI: https://doi.org/10.1039/d1nr00333j

IF: 6.7

2021-04-30

Nanoscale

Abstract:In this work, we present the construction of a multilayered PtSe2/Ge heterostructure-based photodetector array comprising 1 × 10 device units operating in the short-wavelength infrared (SWIR) spectrum region. The as-fabricated heterostructures show an obvious photovoltaic effect, providing the devices with the ability to work as self-driven photodetectors. Upon 1550 nm illumination, a typical photodetector exhibits prominent photoresponse performance with the current on/off ratio, responsivity, external quantum efficiency and specific detectivity reaching 1.08 × 103, 766 mA W-1, 61.3% and 1.1 × 1011 Jones, respectively. The device also has a fast response speed with rise/fall times of 54.9 μs/56.6 μs. Thanks to the respectable homogeneity in device performance, the photodetector array can reliably record an image of a "diode symbol" produced by SWIR irradiation. What is more, the photodetector is successfully integrated into a SWIR optical communication system serving as an optical receiver to transmit a text signal. The above results imply a huge possibility of the present heterostructure-based photodetector array for some optoelectronic purposes such as SWIR image sensing and optical communication applications.

Engineering,Medicine,Physics
Broadband photodetector based on 2D layered PtSe2 / silicon heterojunction at room-temperature

Kai Zhou,Jun Shen,Xiaoxia Li,Xin Hong,Wenlin Feng,Xinyue Tang,Xingchi Jiang,Dacheng Wei,Yifu Chen,Xueqin Liu,Yi Xie,Dapeng Wei,Tai Sun

DOI: https://doi.org/10.1016/j.physe.2020.114147

2020-09-01

Abstract:Previously, the PtSe2 has been proved to absorb light in the infrared band, but most of devices based on PtSe2 were reported in visible light applications while few of them applied in near-infrared. In the visible band, the silicon may absorb most of the light wave, and the device does not make full use of the absorption characteristics of the PtSe2. In our work, we form heterojunction by growing PtSe2 film directly on silicon substrates, the PtSe2 heterojunction has a wide response band. Zero-bias photoresponse in the heterojunctions is observed under broadband laser illumination of wavelengths from 635 to 2700 nm. The devices exhibit excellent performance, specifically, the responsivity is as high as 17.8 mAW−1 at 1550 nm, the Ilight/Idark ratio, specific detectivity, and response speed are 9.2 × 102, 2.38 × 109 Jones and 6/9 μs at room-temperature, respectively. The same device also responds to 635 nm wavelength, and its responsivity, specific detectivity and the Ilight/Idark ratio are 202 mAW−1, 4.39 × 1012 Jones and 1.31 × 105, respectively. Furthermore, it still observes an evident response at 2700 nm wave band. With the wide-band and fast response, the PtSe2/Si heterojunction has potential possibilities in the field of infrared and even mid-infrared photoelectric detection in the future.
Solution-Processed PbSe Colloidal Quantum Dot-Based Near-Infrared Photodetector

Haowei Wang,Zhixiao Li,Chunjie Fu,Dan Yang,Li Zhang,Shengyi Yang,Bingsuo Zou

DOI: https://doi.org/10.1109/lpt.2014.2386342

IF: 2.6

2015-01-01

IEEE Photonics Technology Letters

Abstract:A solution-processed near-infrared (NIR) photodetector based on PbSe colloidal quantum dots (CQDs) with a field-effect transistor (FET) configuration was presented. By blending PbSe CQDs into poly(3-hexylthiophene-2, 5-diyl) (P3HT) as active layer, the photosensitive spectrum of P3HT:PbSe nanocomposites extends into the NIR region. The responsivity and the specific detectivity of FET-based photodetector Au(gate)/PMMA (930nm)/P3HT:PbSe(55nm)/Au(source, drain) reached 500 A/W and 5.02 x 10(12) Jones, respectively, at V-DS = -40 V and V-G = -40 V with 40 mW/cm(2) of 980-nm laser illumination. It gets more stable due to its reverse fabrication using the dielectric layer to cover the active layer from environment air.
High-Performance Uncooled Mid-Infrared Detector Based on a Polycrystalline PbSe/CdSe Heterojunction

Jijun Qiu,Leisheng Su,Lance L. McDowell,Quang Phan,Yun Liu,Guodong Zhang,Yiming Yang,Zhisheng Shi

DOI: https://doi.org/10.1021/acsami.3c01538

IF: 9.5

2023-01-01

ACS Applied Materials & Interfaces

Abstract:Developing high-performance, uncooled mid-wavelength infrared (MWIR) detectors is a challenging task due to the inherent physical properties of materials and manufacturing technologies. In this study, we designed and manufactured an uncooled polycrystalline PbSe/CdSe heterojunction photovoltaic (PV) detector through vapor physical deposition. The resulting 10 μm × 10 μm device exhibited a peak detectivity of 7.5 × 109 and 3 × 1010 cm·Hz1/2·W-1 at 298 and 220 K, respectively, under blackbody radiation. These values are comparable to those of typical PbSe photoconductive detectors fabricated through standard chemical bath deposition. Additionally, the sensitization-free process used to create these PbSe/CdSe PV detectors allows for high replicability and yield, making them promising candidates for low-cost, high-performance, uncooled MWIR focal plane array imaging in commercial applications.
High-performance broadband heterojunction photodetectors based on multilayered PtSe 2 directly grown on a Si substrate

Chao Xie,Longhui Zeng,Zhixiang Zhang,Yuen-Hong Tsang,Linbao Luo,Jung-Ho Lee

DOI: https://doi.org/10.1039/c8nr04004d

IF: 6.7

2018-01-01

Nanoscale

Abstract:The broadband heterojunction photodetectors, exhibiting superior photoresponse performances ranged from deep ultraviolet to near-infrared, were made by growing a multilayered PtSe 2 film directly onto Si.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Scalable fabrication of long-wave infrared PtSe 2 -G heterostructure array photodetectors

Mingsheng Long,Fengkui Liu,Fei Ding,Yang Wang,Jiafu Ye,Runzhang Xie,Hao Wang,Mengjian Xu,Fang Wang,Yubing Tu,Tao Han,Feng Li,Zongyuan Zhang,Liwei Liu

DOI: https://doi.org/10.1063/5.0027785

IF: 4

2020-12-07

Applied Physics Letters

Abstract:Two-dimensional (2D) materials with excellent optoelectronic properties have attracted tremendous research interest in recent years. The promising performances of photodetectors based on 2D materials, such as ultrafast photoresponse and ultrahigh photoresponsivity, have been demonstrated in the visible to short-wavelength infrared spectrum range (0.8–2 μm). However, high performance, room temperature operation long-wavelength infrared (LWIR) photodetection is challenging. The detectors based on graphene usually exhibit low photoresponsivity due to the low optical absorption and short carrier lifetime. In addition, the relatively large bandgap of transition metal dichalcogenides limited the photoresponse bandwidth. Here, we report a way to fabricate a scalable device array of room-temperature operation LWIR PtSe2-G heterostructure detectors. The photoresponsivity at 10.6 μm up to ∼300 mA/W is obtained. The long-wave infrared light in the pico-watt range could be detected at room temperature by the PtSe2-G heterostructure detector. This result indicates that the PtSe2-G heterostructure device could be a highly competitive candidate for an uncooled LWIR detector. It also opens a way for a scalable array infrared focus plane device for the LWIR image.

physics, applied

A High-Performance Near-Infrared Light Photovoltaic Detector Based on a Multilayered PtSe2/Ge Heterojunction

Hybrid Dirac Semimetal-Based Photodetector with Efficient Low-Energy Photon Harvesting

High-performance Near-Infrared PtSe2/n-Ge Heterojunction Photodetector with Ultrathin Al2O3 Passivation Interlayer

PtSe2/InP Mixed‐Dimensional Schottky Junction for High‐Performance Self‐Powered Near‐Infrared Photodetection

Fabrication Of Pdse2/Gaas Heterojunction For Sensitive Near-Infrared Photovoltaic Detector And Image Sensor Application

Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

High-performance Broadband Photodetector Based on PtSe 2 /mos 2 Heterojunction from Visible to Near-Infrared Region

Multilayered PtSe2/pyramid-Si Heterostructure Array with Light Confinement Effect for High-Performance Photodetection, Image Sensing and Light Trajectory Tracking Applications

Quasi-2D Perovskite Antireflection Coating Boosting the Performance of Multilayered PdTe2/Ge Heterostructure-Based Near-Infrared Photodetectors

Design of 2D Layered PtSe2 Heterojunction for the High-Performance, Room-Temperature, Broadband, Infrared Photodetector

Near‐Infrared Light Photovoltaic Detector Based on GaAs Nanocone Array/Monolayer Graphene Schottky Junction

High-performance broadband photodetector based on PtSe2/MoS2 heterojunction from visible to near-infrared region

Multilayered PtSe 2 /pyramid-Si heterostructure array with light confinement effect for high-performance photodetection, image sensing and light trajectory tracking applications

Design of Self-Powered 2D Te/PtSe2 Heterojunction for Room-Temperature NIR Detection

Infrared Photovoltaic Detector Based on P-Gete/n-si Heterojunction.

Construction of PtSe2/Ge heterostructure-based short-wavelength infrared photodetector array for image sensing and optical communication applications.

Broadband photodetector based on 2D layered PtSe2 / silicon heterojunction at room-temperature

Solution-Processed PbSe Colloidal Quantum Dot-Based Near-Infrared Photodetector

High-Performance Uncooled Mid-Infrared Detector Based on a Polycrystalline PbSe/CdSe Heterojunction

High-performance broadband heterojunction photodetectors based on multilayered PtSe 2 directly grown on a Si substrate

Scalable fabrication of long-wave infrared PtSe 2 -G heterostructure array photodetectors