Enhancement of Critical Current Density by Borohydride Pinning in H-doped MgB2 Bulks

Qi Cai,Tong-Yi Zhang,Qian Zhao,Zhiwei Zhang,Yongchang Liu,Qian Li
DOI: https://doi.org/10.1063/1.5064498
IF: 2.877
2019-01-01
Journal of Applied Physics
Abstract:The present study discovers the significant enhancement of critical current density by borohydride pinning in H-doped MgB2 bulks. Second-phase borohydrides are formed by synthesizing MgB2 bulks ex situ in an H2 atmosphere and in situ with H-trapped boron based on the concept of gas doping. Second phase Mg(BH4)2 appears in the samples ex situ sintered in an H2 atmosphere, leading to an enhancement of critical current density at magnetic fields over 3 T. Moreover, the in situ synthesized samples from H-trapped boron also exhibit a significantly enhanced critical current density of 1.8 × 104 A cm−2 at 20 K and 3 T, due to Mg(BH4)2 pinning centers that are embedded in the MgB2 grains. In contrast, the critical current density is only 9.6 × 103 A cm−2 at 20 K and 3 T in an un-doped MgB2 sample.
What problem does this paper attempt to address?