Abstract:On-chip optical waveguides with low propagation losses and precisely engineered group velocity dispersion (GVD) are important to nonlinear photonic devices such as soliton microcombs. Yet, despite intensive research efforts, nonlinear integrated photonic platforms still feature propagation losses orders of magnitude higher than in standard optical fiber. The tight confinement and high index contrast of integrated waveguides make them highly susceptible to fabrication induced surface roughness. Therefore, microresonators with ultra-high Q factors are, to date, only attainable in polished bulk crystalline, or chemically etched silica based devices, that pose however challenges for full photonic integration. Here, we demonstrate the fabrication of silicon nitride ($\mathrm{Si_3N_4}$) waveguides with unprecedentedly smooth sidewalls and tight confinement with record low propagation losses. This is achieved by combining the photonic Damascene process with a novel reflow process, which reduces etching roughness, while sufficiently preserving dimensional accuracy. This leads to previously unattainable \emph{mean} microresonator Q factors larger than $5\times10^6$ for tightly confining waveguides with anomalous dispersion. Via systematic process step variation and two independent characterization techniques we differentiate the scattering and absorption loss contributions, and reveal metal impurity related absorption to be an important loss origin. Although such impurities are known to limit optical fibers, this is the first time they are identified, and play a tangible role, in absorption of integrated microresonators. Taken together, our work provides new insights in the origins of propagation losses in $\mathrm{Si_3N_4}$ waveguides and provides the technological basis for integrated nonlinear photonics in the ultra-high Q regime.

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Optical loss measurements in femtosecond laser written waveguides in glass

Optically Pumped AlGaN Double Heterostructure Deep-UV Laser by Molecular Beam Homoepitaxy: Mirror Imperfections and Cavity Loss

AlGaN-Based Deep Ultraviolet Vertical-Cavity Surface-Emitting Laser

Permanent mitigation of loss in ultrathin SOI high-Q resonators using UV light

Analysis of microcavity VCSEL lasing modes using a full-vector weighted index method

Ultra-high-Q UV microring resonators based on single-crystalline AlN platform

Low-loss integrated photonics for the blue and ultraviolet regime

Photoassisted Chemical Smoothing of AlGaN Surface after Laser Lift-off

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Measurement of Ultra-Low Losses in Optical Supercavity

Probing the loss origins of ultra-smooth $\mathrm{Si_3N_4}$ integrated photonic waveguides

Low-threshold AlGaN-based UVB VCSELs enabled by post-growth cavity detuning

Internal Loss in Diode Lasers with Quantum Well-Dots

Reduction of Lasing Threshold of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Short Cavity Lengths

Dynamics of Nonlinear Optical Losses in Silicon‐Rich Nitride Nano‐Waveguides

The effect of In(Ga)As/GaAs quantum dots on the optical loss of photonic crystal cavities

Precision Measurement of Ultralow Losses of an Asymmetric Optical Microcavity

Deep UV photolithography enhanced geometric homogeneity for low loss photonic crystal waveguides

Low-threshold AlGaN-based deep ultraviolet laser enabled by a nanoporous cladding layer