Additive-assisted “metal-wire-gap” process for N-type two-dimensional organic crystalline films

Chengdong Yang,Jun Qian,Qijing Wang,Sai Jiang,Yiwei Duan,Hengyuan Wang,Haotian Dai,Yun Li
DOI: https://doi.org/10.1016/j.orgel.2019.02.003
IF: 3.868
2019-01-01
Organic Electronics
Abstract:Two-dimensional (2D) organic crystalline films with thickness of several molecular layers have unique characteristics that ensure a brilliant prospect for electronic applications. However, achieving solution-prepared n-type 2D organic single-crystalline semiconductor films remains to be a challenge. In this study, a “metal-wire-gap” process with additive assistance is used to grow n-type 2D N,N′-1H,1H-perfluorobutyldicyanoperylene-carboxydi-imide (PDIF-CN2) crystalline films. In particular, adding dioctylbenzothienobenzothiophene (C8-BTBT) as the additive into the growth solution facilitates the growth of 2D PDIF-CN2 crystalline films with high morphological uniformity and single-crystalline features with hundreds of microns in size. The film formation mechanism discussed in this paper reveals that the C8-BTBT triggers crystallization by building a wetting heterogeneous interface for PDIF-CN2 nucleation. Thus, additive-assisted crystallization technique has great potential for the solution-based preparation of n-type 2D molecular crystalline films.
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