A New Two-Dimensional Semiconducting Carbon Allotrope with Direct Band Gap: a First-Principles Prediction
Xing Yang,Yuwei Wang,Ruining Xiao,Huanxiang Liu,Zhitong Bing,Yang Zhang,Xiaojun Yao
DOI: https://doi.org/10.1088/1361-648x/abb743
2021-01-01
Abstract:Two-dimensional (2D) carbon materials with an appropriate band gap play important roles in the various electronics fields. Here, based on first-principles calculations, we predict a new 2D carbon allotrope containing 32 atoms, consists of pentagonal, hexagonal, octagonal and decagonal rings. This new allotrope is named as Po-C32, which possesses P4/MMM symmetry with a tetragonal lattice and has a vertical distance of 2.22 Å between the uppermost and undermost atoms. The cohesive energy, phonon band structure,ab initiomolecular dynamics simulations and elastic constants fitting confirm Po-C32 has high stabilities. The fitted in-plane Young's modulus and Poisson's ratio alongaandbdirections areYa=Yb= 244 N m-1andva=vb= 0.14, respectively, exhibiting the same mechanical properties alongaandbdirections. Interestingly, Po-C32 is a semiconductor with a direct band gap of 2.05 eV, comparable to that of phosphorene, exhibiting great potential in nanoelectronics. Moreover, two stable derivative allotropes are also predicted based on Po-C32. Po-C24-3D is an indirect narrow band gap (1.02 eV) semiconductor, while Po-C32-3D possesses a wider indirect band gap of 3.90 eV, which can be also applied in optoelectronic device.