Abstract:Bilayer graphene has attracted wide attention due to its unique band structure and bandgap tunability under specific (Bernal or AB) stacking order. However, it remains challenging to tailor the stacking order and to simultaneously produce large-scale and high-quality bilayer graphene. This work introduces a fast and reliable method of growing high-quality Bernal stacked large-area (>3 in. X 3 in.) bilayer graphene film or trilayer graphene domains (30 pm x 30 mu m) using chemical vapor deposition (CVD) on engineered Cu-Ni alloy catalyst films. The AB stacking order is evaluated by Raman spectra, electron diffraction pattern, and dual gate field-effect-transistor (FET) measurements, and a near-perfect AB stacked bilayer graphene coverage (>98%) is obtained. The synthesized bilayer and trilayer graphene with Bernal stacking exhibit electron mobility as high as 3450 cm(2)/(V.s)and 1500 cm(2)/(V.s), respectively, indicating comparable quality with respect to exfoliated bilayer and trilayer graphene. The record high (for CVD bilayer graphene) ON to OFF current ratios (up to 15) obtained for a large number (>50) of dual-gated FETs fabricated at random across the large-area bilayer graphene film also corroborates the success of our synthesis technique. Moreover, through catalyst engineering, growth optimization, and element analysis of catalyst, it is shown that achieving surface catalytic graphene growth mode and precise control of surface carbon concentration are key factors determining the growth of high quality and large area Bernal stacked bilayer graphene on Cu-Ni alloy. This discovery can not only open up new vistas for large-scale electronic and photonic device applications of graphene but also facilitate exploration of novel heterostructures formed with emerging beyond graphene two-dimensional atomic crystals.

Layer-by-layer Synthesis of Bilayer and Multilayer Graphene on Cu Foil Utilizing the Catalytic Activity of Cobalt Nano-Powders

Growth mechanism and controlled synthesis of AB-stacked bilayer graphene on Cu-Ni alloy foils.

Controllable and Rapid Synthesis of High-Quality and Large-Area Bernal Stacked Bilayer Graphene Using Chemical Vapor Deposition

Fast synthesis of large-area bilayer graphene film on Cu

Layer-by-layer Growth of Bilayer Graphene Single-Crystals Enabled by Proximity Catalytic Activity

High-quality Bilayer Graphene Grown on Softened Copper Foils by Atmospheric Pressure Chemical Vapor Deposition

Synchronous Growth of High‐Quality Bilayer Bernal Graphene: From Hexagonal Single‐Crystal Domains to Wafer‐Scale Homogeneous Films

Direct synthesis of single-crystal bilayer graphene on various dielectric substrates

Controllable Synthesis and Growth Mechanism of Interlayer-Coupled Multilayer Graphene

Synthesis of Homogenous Bilayer Graphene on Industrial Cu Foil

Atomistic Mechanisms for Bilayer Growth of Graphene on Metal Substrates

Layer-by-layer growth of bilayer graphene single-crystals enabled by self-transmitting catalytic activity

Controlled Growth of Bilayer Graphene on Space-Confined Cu Substrates

Layer-controlled and wafer-scale synthesis of uniform and high-quality graphene films on a polycrystalline nickel catalyst

Self-Regulating Homogenous Growth of High-Quality Graphene on Co-Cu Composite Substrate for Layer Control

Formation of bilayer bernal graphene: layer-by-layer epitaxy via chemical vapor deposition.

Synthesis of Multilayer Graphene with Controlled C Supply

Monolayer Graphene Growth Using Additional Etching Process in Atmospheric Pressure Chemical Vapor Deposition

Precise CO2 Reduction for Bilayer Graphene

Site-Selective Synthesis of Bilayer Graphene on Cu Substrates Using Titanium as a Carbon Diffusion Barrier

Large-Area Synthesis of High-Quality and Uniform Monolayer Graphene Without Unexpected Bilayer Regions