A 25-Gs/s 6-Bit Time-Interleaved SAR ADC with Design-for-test Memory in 40-Nm Low-Leakage CMOS

Long Zhao,Bao Li,Yuhua Cheng
DOI: https://doi.org/10.1080/00207217.2019.1570557
2019-01-01
International Journal of Electronics
Abstract:This paper presents a 25-GS/s 6-bit time-interleaved (TI) SAR ADC in a 40-nm CMOS low-leakage (LL) process. The prototype utilizes 4 x 12 hierarchical sampling architecture to reduce the complexity of track-and-hold circuits and the timing skew calibration. The single-channel SAR ADC adopts asynchronous processing with two alternate comparators. A partially active reference voltage buffer is designed to reduce the power consumption. The method based on sinusoidal signal approximation is employed to calibrate timing skew errors. To characterize the ultra-high-speed ADC, an on-chip design-for-test memory is designed. At 25 GS/s, the ADC achieves the SNDR of 32.18 dB for low input frequency and 27.28 dB for Nyquist frequency. The chip consumes 800 mW and occupies 1.3 x 2.6 mm(2), including the TI ADC core and memory.
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