High Performance N-Type Vertical Organic Phototransistors

Kaiheng Yeliu,Jianfeng Zhong,Xiumei Wang,Yujie Yan,Qizhen Chen,Yun Ye,Huipeng Chen,Tailiang Guo
DOI: https://doi.org/10.1016/j.orgel.2019.01.018
IF: 3.868
2019-01-01
Organic Electronics
Abstract:In this manuscript, a solution-processed n-type organic phototransistor based on vertical structure thin-film transistors was proposed. Due to the vertical structure and short channel length (approximate to 130 nm), the transistors exhibited excellent current density (15.4 mA/cm(2)) with high I-on/I-off ratio (up to 10(5)). On account of this structure, the face-on it-:e stacking of P(NDI2OD-T2) was aligned with the charge transport direction, which facilitated charge transfer from source to drain electrode. Moreover, n-type organic phototransistors based on vertical thin-film transistors were demonstrated for the first time, in which the active layer was protected by the source-drain electrodes, resulting in the improvement of the stability of the device. Due to the nanoscale channel, efficient separation of electron-hole pairs and quick charge transfer can be achieved. Hence, high-performance n-type phototransistor was obtained with responsivity of 34.8 A/W, photosensitivity of 4.78 x 10(4), detectivity of 3.95 x 10(13) Jones and external quantum efficiency up to 1.1 x 10(4)% under 400 nm illumination with a light intensity of 200 mu W cm(-2), which was much better than those reported n-type organic phototransistors. This work provided a strategy for the fabrication of high performance n-type organic phototransistor, which paved the way for its future application in the next-generation organic optoelectronics.
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