High-Performance N-Type Organic Thin-Film Phototransistors Based On A Core-Expanded Naphthalene Diimide

zhe qi,xiaxia liao,jincheng zheng,chongan di,xike gao,jizheng wang
DOI: https://doi.org/10.1063/1.4817267
IF: 4
2013-01-01
Applied Physics Letters
Abstract:High-performance n-type organic phototransistors (OPTs) based on a core-expanded naphthalene diimide are reported in this letter. The photo responsivity is as high as 27000 AW(-1) and photocurrent/dark-current ratio reaches 1.1 x 10(7) under a white light illumination with a power density of 107 mu Wcm(-2). In such OPTs, persistent photoconductivity (PPC) is observed, which can be instantly eliminated by a positive gate voltage pulse. This is explained in terms of trapped photo holes in the channel. In the light on-off switching test, such PPC also leads to well-reproducible memory effect in the OPTs. (C) 2013 AIP Publishing LLC.
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