Abstract:The rapid development of the semiconductor industry has motivated researchers' passion for accelerating the discovery of advanced optoelectronic semiconductors. Optoelectronic semiconductors have played a significant role in energy and electronic applications in recent decades and can convert light to electric energy and inverse conversion. As relevant theories and methodologies have developed, we can feasibly predict the optoelectronic properties of hundreds of materials by first-principles calculations within short timeframes at a practical level of accuracy. A fundamental understanding of the structure-property relationship of optoelectronic semiconductors is essential to fabricate novel materials and high-performance devices. Ideal optoelectronic semiconductors require tunable band gaps, high absorption coefficient, broad absorption spectrum, high charge carrier mobility, and long charge diffusion length, which enable a broad range of photovoltaic and optoelectronic applications. These optoelectronic properties can be explored comprehensively and efficiently by theoretical design methods. Furthermore, compared with the experimental processes of trial-and-error, the theoretical design method has the advantages of a short development cycle and low cost. Therefore, the theoretical design method gradually becomes critical in researching and developing new materials. Combining physical principles with theoretical design strategies such as high-throughput screening, intelligent optimization algorithms, and machine learning, optoelectronic semiconductor materials can be accurately and efficiently explored. This review summarizes the optoelectronic semiconductor materials' design strategies and some typical design examples. In the first section, we introduce the methods of calculating several representative optoelectronic properties based on first principles calculations and analyze the causes of relevant physical properties and their significance in the application of optoelectronic semiconductors. This chapter not only introduces the calculation method and physical meaning of these optoelectronic properties in general cases but also explains the matters needing attention in some exceptional cases, which can be used as a reference for the relevant work in the calculation of these properties. Then in the second section, we introduce the guiding principles of four different optoelectronic semiconductor designing strategies, including high-throughput materials screening, physical principles instructed materials design, materials prediction based on intelligent algorithms, and materials discovery based on machine learning. The high-throughput screening strategy is based on first-principles calculations of a group of structures with similar characteristics. During the design process, candidate structures will be accurately and efficiently screened based on the multi-level screening funnel designed by expected targets. Physical principles instructed materials design strategy aims to discover the target structures inversely and further analyze their underlying physical principles from some phenomena. The strategy of materials prediction based on the intelligent algorithm explores the potential energy surface through global optimization algorithms such as genetic or evolutionary algorithms and predicts ideal stable structures according to the component information. The strategy of materials discovery based on machine learning can extract valuable information through artificial intelligence algorithms from massive data, reorganize existing knowledge and discover hidden relationships between different materials. It is practical to solve the short board of DFT calculations when dealing with complex chemical space and large systems with the machine learning method. To illustrate these theoretical design modalities, we provide various examples of representative optoelectronic materials, such as perovskites, metal oxides, wide bandgap semiconductors, and organic-inorganic semiconductors. Summaries and prospects for the computational design of optoelectronic semiconductors are further emphasized at the end of the review.

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