Photodetectors: Design Principles and Material Engineering of ZnS for Optoelectronic Devices and Catalysis (adv. Funct. Mater. 36/2018)
Xiaojie Xu,Siyuan Li,Jiaxin Chen,Sa Cai,Zhenghao Long,Xiaosheng Fang
DOI: https://doi.org/10.1002/adfm.201870256
IF: 19
2018-01-01
Advanced Functional Materials
Abstract:Advanced Functional MaterialsVolume 28, Issue 36 1870256 Inside Back CoverFree Access Photodetectors: Design Principles and Material Engineering of ZnS for Optoelectronic Devices and Catalysis (Adv. Funct. Mater. 36/2018) Xiaojie Xu, Xiaojie Xu Department of Materials Science, Fudan University, Shanghai, 200433 P. R. ChinaSearch for more papers by this authorSiyuan Li, Siyuan Li Department of Materials Science, Fudan University, Shanghai, 200433 P. R. ChinaSearch for more papers by this authorJiaxin Chen, Jiaxin Chen Department of Materials Science, Fudan University, Shanghai, 200433 P. R. ChinaSearch for more papers by this authorSa Cai, Sa Cai Department of Materials Science, Fudan University, Shanghai, 200433 P. R. ChinaSearch for more papers by this authorZhenghao Long, Zhenghao Long Department of Materials Science, Fudan University, Shanghai, 200433 P. R. ChinaSearch for more papers by this authorXiaosheng Fang, Xiaosheng Fang Department of Materials Science, Fudan University, Shanghai, 200433 P. R. ChinaSearch for more papers by this author Xiaojie Xu, Xiaojie Xu Department of Materials Science, Fudan University, Shanghai, 200433 P. R. ChinaSearch for more papers by this authorSiyuan Li, Siyuan Li Department of Materials Science, Fudan University, Shanghai, 200433 P. R. ChinaSearch for more papers by this authorJiaxin Chen, Jiaxin Chen Department of Materials Science, Fudan University, Shanghai, 200433 P. R. ChinaSearch for more papers by this authorSa Cai, Sa Cai Department of Materials Science, Fudan University, Shanghai, 200433 P. R. ChinaSearch for more papers by this authorZhenghao Long, Zhenghao Long Department of Materials Science, Fudan University, Shanghai, 200433 P. R. ChinaSearch for more papers by this authorXiaosheng Fang, Xiaosheng Fang Department of Materials Science, Fudan University, Shanghai, 200433 P. R. ChinaSearch for more papers by this author First published: 03 September 2018 https://doi.org/10.1002/adfm.201870256Citations: 3AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Graphical Abstract The unique optoelectronic properties of ZnS make for an excellent transparent semiconductor that turns ultraviolet radiation into electrical signals. In article number 1802029, Xiaosheng Fang and co-workers comprehensively summarize the recent breakthroughs in research on ZnS and propose design principles and engineering techniques for tailoring ZnS toward improved/novel optoelectronic properties, which enable applications including transparent conductors, UV photodetectors, luminescent devices, and catalysts. Citing Literature Volume28, Issue36September 5, 20181870256 RelatedInformation