The Minimum Specific On-Resistance of Semi-SJ Device

Wentong Zhang,Ke Zhang,Lingying Wu,Yan Sun,Xinkai Guo,Zhuo Wang,Ming Qiao,Zhaoji Li,Bo Zhang

DOI: https://doi.org/10.1109/ted.2018.2881293

2023-01-01

Abstract:The minimum specific ON-resistance ${R}_{on,min}$ of the three-dimensional superjunction (3-D SJ) device is realized in this article. The electric field of the 3-D SJ is treated as a vector superposition of a 1-D potential field ${E}_{p}$ and a 3-D charge electric field ${E}_{q}$ ( ${x}$ , ${r}$ , $\theta $ ) that is first deduced by solving the 3-D Poisson’s equation with the Taylor series method. Then, the optimization essence of the 3-D SJ is revealed as the variable modulation of 3-D ${E}_{q}$ ( ${x}$ , ${r}$ , $\theta $ ) on ${E}_{p}$ . The only ${R}_{\text {on,min}}$ of the 3-D SJ under given cell pitch ${W}$ and breakdown voltage ${V}_{B}$ is searched in its global doping range to give design formulas. It is found from the model that the 3-D SJ shows a new ${R}_{\text {on,min}} \propto ~{V}_{B}^{1.03}$ relationship lower than that of the optimized 2-D SJ. The analytical results are in good agreement with the simulations.