Abstract:Gallium‐doped passivated emitter and rear cells (PERCs) showed great promise for future advanced highly efficient solar cells. However, there is a lack of information available regarding the field degradation of gallium‐doped PERC solar modules. In this work, the field degradation of gallium‐doped PERC solar modules is investigated and compared with the field degradation of stabilized boron‐doped PERC solar modules. It is remarkable that the peak power degradation curves of the gallium‐doped PERC solar modules present two degradation stages which might be attributed to synthetical results of light‐induced degradation (LID) and light and elevated temperature‐induced degradation (LeTID). The extents of degradation for the gallium‐doped PERC solar modules are smaller than that of the stabilized boron‐doped PERC solar modules. The LID characteristic of the gallium‐doped PERC solar modules is caused by the presence of residual boron in Ga‐doped Cz‐Si wafers which has been demonstrated by the results of inductively coupled plasma‐mass spectrometry. Moreover, a comparative study of daily yield for gallium‐ and boron‐doped PERC photovoltaic arrays is carried out. It was found that the gallium‐doped photovoltaic array has a higher energy yield and shows a better performance ratio than the boron‐doped photovoltaic array. The reason is that the performance degradation and its induced mismatch loss of gallium‐doped solar modules in the field are smaller than that of the boron‐doped solar modules. In this work, the field degradation of gallium‐doped PERC solar modules is investigated and compared with that of stabilized boron‐doped PERC solar modules. It is found that Ga‐doped devices are not completely immune to LID because of the residual B originated from virgin silicon in Ga‐doped wafer. Moreover, the gallium‐doped PERC solar module array show smaller mismatch loss, higher energy yield, and better performance ratio compared to the commercial boron‐doped PERC solar module array in the field.

Reliability Of Anti-Lid Technology For Commercialized B-Doped Perc Solar Cells

Study on Permanent Deactivation of the Light-Induced Degradation in P-Type Compensated Crystalline Silicon Solar Cells

Performance degradation of commercial Ga‐doped passivated emitter and rear cell solar modules in the field

Comprehensive Understanding of Heat-Induced Degradation of Triple-Cation Mixed Halide Perovskite for a Robust Solar Cell

The Effect and Mechanism of Current Injection to Suppress Light and Elevated Temperature Induced Degradation in P-Type Cast-Mono and Multicrystalline Silicon Passivated Emitter and Rear Cells

Dark and illuminated J(V) characteristics of thin layered bulk heterojunction P3HT:PCBM sandwich solar cells after thermal treatment

Characterization of rear-side potential-induced degradation in bifacial p-PERC solar modules

An Industrial Solution to Light-Induced Degradation of Crystalline Silicon Solar Cells

Improving Heat Transfer Enables Durable Perovskite Solar Cells

Correlating Nanoscale Morphology with Device Performance in Conventional and Inverted PffBT4T-20D:PC71 BM Polymer Solar Cells

Correlating Nanoscale Morphology with Device Performance in Conventional and Inverted PffBT4T-2OD:PC<sub>71</sub>BM Polymer Solar Cells

High performance and stability of perovskite solar cells achieved through anti-solvent modulation of multi-orientation PbI 2 and stress relief

In-Situ LID and Regeneration of Al-BSF Solar Cells from Different Positions of a B-Doped Cz-Si Ingot

Modulation of perovskite degradation with multiple-barrier for light-heat stable perovskite solar cells

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Effect of Ion Migration-Induced Electrode Degradation on the Operational Stability of Perovskite Solar Cells

Thermal-Induced Performance Decay of the State-of-the-Art Polymer: Non-Fullerene Solar Cells and the Method of Suppression

High-Performance Perovskite Solar Cells by Doping Didodecyl Dimethyl Ammonium Bromide in the Hole Transport Layer

Measuring metal halide perovskite single cell degradation consistent with module-based conditions

Kinetics of light and elevated temperature-induced degradation in cast mono p-type silicon

Laser Doping Selective Emitter with Thin Borosilicate Glass Layer for N-Type Topcon Solar Cells