Abstract:Photonic switches have attractive application prospects in optical communication data networks that require dynamic reconfiguration. Integrating optical switching devices with optical fiber, the most widely deployed photonic technology platform, can realize signal transmission and processing in practical applications. Here, we demonstrate the multilevel optical switching using the phase-change material Ge2Sb2Te5 (GST) integrated on a graded-index multimode fiber. This switching process works by exploiting the significant difference in extinction coefficient between the crystalline state and the amorphous state of the GST. Using GST to achieve the switch function, no external energy source is needed to maintain the existing state of the switch, and the device is nonvolatile. This multi-level optical switch is an all-fiber integrated device. We apply GST to the end facets of the graded-index multimode fiber by magnetron sputtering, which is a reflective structure. A pulsing scheme is used to control the optical propagation state of the optical modulation signal to realize the switching function. It can store up to 11 non-volatile reliable and repeatable levels encoded by the pump source laser with a wavelength of 1550 nm. At the same time, the switching process between states is on the order of hundreds of nanoseconds. The present experimental results demonstrate the feasibility of 11 multilevel states in the field of optical fibers commonly used in communications. It can be well coupled with the all-fiber terminal device. It also shows that the device is still applicable in the 1525 nm∼1610 nm broadband range, promising for designing future multilevel photonic switches and memory devices.

Non-volatile Optical Switch Based on a GST-Loaded Directional Coupler

All-optically Modulated Nonvolatile Optical Switching Based on a Graded-Index Multimode Fiber.

All-fiber Nonvolatile Optical Switch

Contra-directional Switching Enabled by Si-GST Grating.

Non-volatile Polarization-Insensitive 1×2 Silicon Optical Switch Using Phase-Change Materials

Resonant-enhanced Optical Switch Based on Non-Volatile Phase Change Material GST

Non-volatile Flexible-Grid Wavelength-Selective Switch Using Subwavelength-Grating-ge2sb2te5-assisted Silicon Microring Resonators

Nonvolatile multi-level adjustable optical switch based on the phase change material

Feasibility Study of a Ge2Sb2Te5-clad Silicon Waveguide As a Non-Volatile Optical On-off Switch

Non-volatile 2 × 2 optical switch using multimode interference in an Sb2Se3-loaded waveguide

Digital Optical Switch Based on Fast Thermal Gradient Switching in InGaAsP Waveguides

Switchable Polarization Beam Splitter Based on GST-on-Silicon Waveguides

Design of Phase Change Ge2Sb2Te5 Based On-off Electro-Optic Switch

Design of Low Loss 1 × 1 and 1 × 2 Phase-Change Optical Switches with Different Crystalline Phases of Ge2Sb2Te5 Films

Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation

Wavelength-selective 2 × 2 Optical Switch Based on a Ge 2 Sb 2 Te 5 -Assisted Microring

Nonvolatile Multilevel Switching of Silicon Photonic Devices with In<sub>2</sub>O<sub>3</sub>/GST Segmented Structures

Ultra-Compact Multi-Level Optical Switching with Non-Volatile GST Phase Change

Fiber End-Facet Integrated Non-Volatile Optical Switch Based on Ge2Sb2Te5

Nonvolatile Multilevel Switching of Silicon Photonic Devices with In2O3/GST Segmented Structures

Design of Ultra-Compact Optical Memristive Switches with GST as the Active Material.