Abstract:Arrays of randomly oriented zinc oxide (ZnO) nanowires were fabricated on silicon wafers via a simple thermal evaporation method. During the fabrication, the temperature around the substrate was below 500°C. The products were analyzed by conventional means and determined to be single crystals of wurtzite-type ZnO that grew along the c-axis. These nanowires were 10–100nm in diameter and 10–100μm in length, suggesting a possible high field enhancement factor. The dependence of the field emission current on the anode–cathode voltage (I–V behavior) of the ZnO nanowire arrays was measured in a lab-built ultrahigh vacuum system with a base pressure of 10−7Pa. After surface cleaning by heat treatment, two characteristic electric fields, under which 10μA/cm2 and 1mA/cm2 current densities were extracted, were measured to be 4.0 and 4.7V/μm, respectively. As observed with a transparent anode, emission occurred uniformly over the whole sample surface. A 72h-long test on emission stability was performed under a constant voltage of 2.75kV. The current dropped occasionally to approximately 80% of the initial value during the test owing to the poor adherence of the nanowires to the substrate. These preliminary results have shown the perspective of, as well as a major drawback to, a ZnO nanowire array being developed into a cold electron source to be used in future electronic devices.

Field Emission Characteristics of Individual ZnO Nanowire Before Vacuum Breakdown

Pulsed-laser Treatment for Lowering Resistance and Enhancing Field Emission of Solution-Grown ZnO Nanowires

Investigation of the Temperature Dependent Field Emission from Individual ZnO Nanowires for Evidence of Field-Induced Hot Electrons Emission

Field-induced Hot-Electron Emission Model for Wide-Band-gap Semiconductor Nanostructures

Field Emission from Zinc Oxide Nanostructures and Its Degradation

Field Emission Characteristics of ZnO Nanowire Driven by Pulsed Voltage

Electrical breakdown of nanowires.

Defective Wo3-X Nanowire: Possible Long Lifetime Semiconductor Nanowire Point Electron Source

In Situ Study of Field Emission Vacuum Breakdown of Individual Multi-Wall Carbon Nanotube

Stable, Self-Ballasting Field Emission from Zinc Oxide Nanowires Grown on an Array of Vertically Aligned Carbon Nanofibers

Effect of Pressure on Field Emission Pattern from ZnO Nanowires

Penetration Length-Dependent Hot Electrons in the Field Emission from ZnO Nanowires

In-Situ Study of Surface Work Function, Electrical Characteristic and Field Emission Property of Individual Zno Nanowire

Theoretical Analysis of Self-Heating and Cooling Processes in the Pulsed Field Emission from ZnO Nanowire for Achieving High Emission Current

Field Emission Properties of Zinc Oxide Nanowires Fabricated by Thermal Evaporation

Field Emission from Oxide Nanowires: Mechanism and Applications

Field Emission Microscopy Study of Zinc Oxide Nanowires on Tungsten Tip

Mechanism Responsible For Initiating Carbon Nanotube Vacuum Breakdown

Electronic Transport Characteristics Through Individual ZnSnO3 Nanowires

Thermo-enhanced Field Emission from ZnO Nanowires: Role of Defects and Application in a Diode Flat Panel X-ray Source

Simulation of Space Charge Effect in Field Emission from a Nanowire