A 20.7–31.8ghz Dual-Mode Voltage Waveform-Shaping Oscillator with 195.8dbc/hz FoMT in 28nm CMOS

Yiyang Shu,Huizhen Jenny Qian,Xun Luo
DOI: https://doi.org/10.1109/rfic.2018.8429001
2018-01-01
Abstract:A 20.7-31.8GHz dual-mode voltage waveform-shaping oscillator is presented in this paper. Dual-mode voltage waveform shaping resonator is proposed to excite two pairs of resonances, representing fundamental and third-order harmonic in two modes, respectively. Mode-switch-circuits are implemented to allocate specific mode without degrading the Q-factor of the resonator. As a result, the square-like voltage waveform can be obtained in dual-mode to reduce the ISF rms value for lower phase noise and further extend the tuning range. The oscillator is fabricated using a conventional 28nm CMOS technology with the core size of 420μm by 160μm, which exhibits a measured phase noise of -102.46dBc/Hz at 1MHz offset with a carrier frequency of 25.56GHz. A state-of-the-art FoMT of 195.8dBc/Hz is achieved with the wide tuning range of 42.3% and power consumption of 5.5mW.
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