Abstract:For unipolar hydrodynamic model of semiconductor device represented by Euler-Poisson equations, when the doping profile is supersonic, the existence of steady transonic shock solutions and C-smooth steady transonic solutions for Euler-Poisson Equations were established in [27] and [41], respectively. In this paper we further study the nonlinear structural stability and the linear dynamic instability of these steady transonic solutions. When the C^1-smooth transonic steady-states pass through the sonic line, they produce singularities for the system, and cause some essential difficulty in the proof of structural stability. For any relaxation time, by means of elaborate singularity analysis, we first investigate the structural stability of the C^1-smooth transonic steady-states, once the perturbations of the initial data and the doping profiles are small enough. Moreover, when the relaxation time is large enough, under the condition that the electric field is positive at the shock location, we prove that the transonic shock steady-states are structurally stable with respect to small perturbations of the supersonic doping profile. Furthermore, we show the linearly dynamic instability for these transonic shock steady-states provided that the electric field is suitable negative. The proofs for the structural stability results are based on singularity analysis, a monotonicity argument on the shock position and the downstream density, and the stability analysis of supersonic and subsonic solutions. The linear dynamic instability of the steady transonic shock for Euler-Poisson equations can be transformed to the ill-posedness of a free boundary problem for the Klein-Gordon equation. By using a nontrivial transformation and the shooting method, we prove that the linearized problem has a transonic shock solution with exponential growths. These results enrich and develop the existing studies.

Stability of Steady-State Solutions to Navier–Stokes–Poisson Systems

Stability of non-constant steady state solutions for non-isentropic Euler-Poisson system in semiconductors

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