Abstract:Understanding the band structure evolution of (AlxGa1−x)2O3 alloys is of fundamental importance for developing Ga2O3-based power electronic devices and vacuum ultraviolet super-radiation hard detectors. Here, we report on the bandgap engineering of β-(AlxGa1−x)2O3 thin films and the identification of compositionally dependent electronic band structures by a combination of absorption spectra analyses and density functional theory calculations. Single-monoclinic β-phase (AlxGa1−x)2O3 (0 ≤ x ≤ 0.54) films with a preferred (−201) orientation were grown by laser molecular beam epitaxy with tunable bandgap ranging from 4.5 to 5.5 eV. The excellent fitting of absorption spectra by the relation of (αhν)1/2 ∝ (hν-E) unambiguously identifies that β-(AlxGa1−x)2O3 alloys are indirect bandgap semiconductors. Theoretical calculations predict that the indirect nature of β-(AlxGa1−x)2O3 becomes more pronounced with increased Al composition due to the increased eigenvalue energy gap between M and Г points in the valence band. The experimentally determined indirect bandgap exhibits almost a linear relationship with Al composition, which is consistent with the theoretical calculation and indicates a small bowing effect and a good miscibility. The identification and modulation of (AlxGa1−x)2O3 band structures allows rational design of ultra-wide bandgap oxide heterostructures for the applications in power electronics and solar-blind or X-ray detection.Understanding the band structure evolution of (AlxGa1−x)2O3 alloys is of fundamental importance for developing Ga2O3-based power electronic devices and vacuum ultraviolet super-radiation hard detectors. Here, we report on the bandgap engineering of β-(AlxGa1−x)2O3 thin films and the identification of compositionally dependent electronic band structures by a combination of absorption spectra analyses and density functional theory calculations. Single-monoclinic β-phase (AlxGa1−x)2O3 (0 ≤ x ≤ 0.54) films with a preferred (−201) orientation were grown by laser molecular beam epitaxy with tunable bandgap ranging from 4.5 to 5.5 eV. The excellent fitting of absorption spectra by the relation of (αhν)1/2 ∝ (hν-E) unambiguously identifies that β-(AlxGa1−x)2O3 alloys are indirect bandgap semiconductors. Theoretical calculations predict that the indirect nature of β-(AlxGa1−x)2O3 becomes more pronounced with increased Al composition due to the increased eigenvalue energy gap between M and Г points in the valence b...

Band Alignments of SiO2 and HfO2 Dielectrics with (Alxga1-X)2o3 Film (0≤x≤0.53) Grown on Ga2O3 Buffer Layer on Sapphire

Band Alignment of SiO2/(Al Ga1-)2O3 (0 ≤x≤ 0.49) Determined by X-ray Photoelectron Spectroscopy

Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Modulation of the structural and optical properties of sputtering-derived HfO2 films by deposition power

Band Alignments at Hf1-xZrxO2/Si and Hf0.52Zr0.48O2/Si0.55Ge0.45 Interfaces

Comparison of Hfalo, Hfo2/Al2o3, and Hfo2 on N-Type Gaas Using Atomic Layer Deposition

Band Alignment of HfAlO/GaN (0 0 0 1) Determined by X-ray Photoelectron Spectroscopy: Effect of in Situ SiH4 Passivation

Identification And Modulation Of Electronic Band Structures Of Single-Phase Beta-(Alxga1-X)(2)O-3 Alloys Grown By Laser Molecular Beam Epitaxy

Identification and modulation of electronic band structures of single-phase β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> alloys grown by laser molecular beam epitaxy

Optical and Electronic Properties of (Alxga1-X)2o3/ Al2O3 (x > 0.4) Films Grown by Magnetron Sputtering

Band Alignment at the Al2O3/β-Ga2O3 Interface with CHF3 Treatment*

Impacts of Oxygen Source on Band Alignment of ALD Al2O3/(α-, Ε-)Ga2o3 Interface

Effect of Gd and Si Co-Doping on the Band Alignment and Electrical Properties of HfO2 Dielectric Films Prepared by Atomic Layer Deposition

Band Alignment and Band Gap Characterization of La2O3 Films on Si Substrates Grown by Radio Frequency Magnetron Sputtering

Band Alignment at the Al<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> Interface with CHF<sub>3</sub> Treatment<sup>*</sup>

Impact of the Al/Hf Ratio on the Electrical Properties and Band Alignments of Atomic-Layer-Deposited Hfo2/Al2o3 on S-Passivated Gaas Substrates

MOCVD Epitaxy of α-(AlxGa1−x)2O3 (x =0–100%) on m-Plane Sapphire Substrate

Band Alignment at the Al2O3/β-Ga2O3 Interface with CHF3 Treatment

Optical and electronic properties of (Al Ga1−)2O3/Al2O3 (x>0.4) films grown by magnetron sputtering

In-situ MOCVD Growth and Band Offsets of Al$_2$O$_3$ Dielectric on $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ thin films