In-situ MOCVD Growth and Band Offsets of Al$_2$O$_3$ Dielectric on $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ thin films

A F M Anhar Uddin Bhuiyan,Lingyu Meng,Hsien-Lien Huang,Jinwoo Hwang,Hongping Zhao

DOI: https://doi.org/10.48550/arXiv.2207.13001

2022-10-13

Abstract:The in-situ metalorganic chemical vapor deposition (MOCVD) growth of Al$_2$O$_3$ dielectrics on $\beta$-Ga$_2$O$_3$ and $\beta$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films is investigated as a function of crystal orientations and Al compositions of $\beta$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films. The interface and film qualities of Al$_2$O$_3$ dielectrics are evaluated by high resolution X-ray diffraction (HR-XRD) and scanning transmission electron microscopy (HR-STEM) imaging, which indicate the growth of high quality amorphous Al$_2$O$_3$ dielectrics with abrupt interfaces on (010), (100) and (-201) oriented $\beta$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films. The surface stoichiometries of Al$_2$O$_3$ deposited on all orientations of $\beta$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ are found to be well maintained with a bandgap energy of 6.91 eV as evaluated by high resolution x-ray photoelectron spectroscopy, which is consistent with the atomic layer deposited (ALD) Al$_2$O$_3$ dielectrics. The evolution of band offsets at both in-situ MOCVD and ex-situ ALD deposited Al$_2$O$_3$/$\beta$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ are determined as a function of Al composition, indicating the influence of the deposition method, orientation, and Al composition of $\beta$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films on resulting band alignments. Type II band alignments are determined at the MOCVD grown Al$_2$O$_3$/$\beta$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ interfaces for (010) and (100) orientations, whereas type I band alignments with relatively lower conduction band offsets are observed along (-201) orientation. Results from this work revealed that the in-situ MOCVD deposited high quality Al$_2$O$_3$ dielectrics with sharp interfaces can be considered as a viable alternative of commonly used ex-situ deposited (ALD) Al$_2$O$_3$ for developing high performance $\beta$-Ga$_2$O$_3$ and $\beta$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ based devices.

Materials Science

What problem does this paper attempt to address?

The problems that this paper attempts to solve are as follows: Grow Al₂O₃ dielectric layers on β - Ga₂O₃ and β - (AlₓGa₁₋ₓ)₂O₃ films with different orientations by in - situ metal - organic chemical vapor deposition (MOCVD), and study their band - offset characteristics. Specifically, the research aims to:

1. **Evaluate the interface quality**: Evaluate the quality of the Al₂O₃ dielectric layer grown by MOCVD and the interface quality between it and β - Ga₂O₃ and β - (AlₓGa₁₋ₓ)₂O₃ films through high - resolution X - ray diffraction (HR - XRD) and scanning transmission electron microscopy (STEM) imaging.

2. **Determine the band - offset characteristics**: Measure the band - offset characteristics of the Al₂O₃/β - (AlₓGa₁₋ₓ)₂O₃ heterojunction on β - (AlₓGa₁₋ₓ)₂O₃ films with different Al components and different orientations, including valence - band offset (ΔEᵥ) and conduction - band offset (ΔEᶜ), through high - resolution X - ray photoelectron spectroscopy (XPS).

3. **Compare the effects of different deposition methods**: Compare the Al₂O₃ deposited in - situ by MOCVD with the Al₂O₃ deposited epitaxially by atomic layer deposition (ALD), and explore the effects of different deposition methods on the band - offset and interface quality.

4. **Optimize future device design**: Through the above research, provide key data support for the design and manufacturing of high - performance transistors based on β - Ga₂O₃ and β - (AlₓGa₁₋ₓ)₂O₃, especially using the Al₂O₃ deposited in - situ by MOCVD as the gate dielectric material.

### Formula summary

The calculation formulas for band - offset are as follows:

\[
\Delta E_v=(E_{\text{Ga 3s}}^{\text{AlGaO}} - E_{\text{VBM}}^{\text{AlGaO}})-(E_{\text{Al 2p}}^{\text{AlO}} - E_{\text{VBM}}^{\text{AlO}})-(E_{\text{Ga 3s}}^{\text{AlGaO/AlO}} - E_{\text{Al 2p}}^{\text{AlGaO/AlO}})
\]

\[
\Delta E_c = E_g^{\text{AlO}} - E_g^{\text{AlGaO}} - \Delta E_v
\]

where:
- \( E_{\text{Ga 3s}}^{\text{AlGaO}} \) and \( E_{\text{Ga 3s}}^{\text{AlGaO/AlO}} \) are the binding energies of the Ga 3s core level in the β - (AlₓGa₁₋ₓ)₂O₃ bulk material and at the Al₂O₃/β - (AlₓGa₁₋ₓ)₂O₃ interface, respectively.
- \( E_{\text{Al 2p}}^{\text{AlO}} \) and \( E_{\text{Al 2p}}^{\text{AlGaO/AlO}} \) are the binding energies of the Al 2p core level in the Al₂O₃ bulk material and at the Al₂O₃/β - (AlₓGa₁₋ₓ)₂O₃ interface, respectively.
- \( E_{\text{VBM}}^{\text{AlGaO}} \) and \( E_{\text{VBM}}^{\text{AlO}} \) are the valence - band maximum positions of β - (AlₓGa₁₋ₓ)₂O₃ and Al₂O₃ bulk materials, respectively.
- \( E_g^{\text{AlO}} \) and \( E_g^{\text{AlGaO}} \) are the band - gap energies of Al₂O₃ and β - (AlₓGa₁₋ₓ)₂O₃ films, respectively.

Through these studies, the paper provides important experimental basis and technical support for the design of high - performance transistors in the future.