Abstract:Nanoprobe X-ray diffraction (nXRD) using focused synchrotron radiation is a powerful technique to study the structural properties of individual semiconductor nanowires. However, when performing the experiment under ambient conditions, the required high X-ray dose and prolonged exposure times can lead to radiation damage. To unveil the origin of radiation damage, we compare nXRD experiments carried out on individual semiconductor nanowires in their as grown geometry both under ambient conditions and under He atmosphere at the microfocus station of the P08 beamline at the 3rd generation source PETRA III. Using an incident X-ray beam energy of 9 keV and photon flux of 10$^{10}$s$^{-1}$, the axial lattice parameter and tilt of individual GaAs/In$_{0.2}$Ga$_{0.8}$As/GaAs core-shell nanowires were monitored by continuously recording reciprocal space maps of the 111 Bragg reflection at a fixed spatial position over several hours. In addition, the emission properties of the (In,Ga)As quantum well, the atomic composition of the exposed nanowires and the nanowire morphology are studied by cathodoluminescence spectroscopy, energy dispersive X-ray spectroscopy and scanning electron microscopy, respectively, both prior to and after nXRD exposure. Nanowires exposed under ambient conditions show severe optical and morphological damage, which was reduced for nanowires exposed under He atmosphere. The observed damage can be largely attributed to an oxidation process from X-ray induced ozone reactions in air. Due to the lower heat transfer coefficient compared to GaAs, this oxide shell limits the heat transfer through the nanowire side facets, which is considered as the main channel of heat dissipation for nanowires in the as-grown geometry.

Study on Irradiation-Induced Defects in GaAs/AlGaAs Core–shell Nanowires Via Photoluminescence Technique

Enhancement of Radiation Tolerance in GaAs/AlGaAs Core-Shell and InP Nanowires

Simulation Study on the Defect Generation, Accumulation Mechanism and Mechanical Response of GaAs Nanowires under Heavy-Ion Irradiation

Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires

Influence of Auger heating and Shockley-Read-Hall recombination on hot carrier dynamics in InGaAs nanowires

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Enhanced Photocurrent Generation In Proton-Irradiated "Giant" Cdse/Cds Core/Shell Quantum Dots

Determination of the optimal shell thickness for self-catalysed GaAs/AlGaAs core-shell nanowires

Effects of Defect, Carrier Concentration and Annealing Process on the Photoluminescence of Silicon Pn Diodes

Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon

Proton Irradiation-Induced Defects in Undoped Gasb Studied by Positron Lifetime Spectroscopy and Photoluminescence

Photoluminescence Study of GaAs Nanowires with and Without AlGaAs Shell

Carrier Lifetime and Mobility Enhancement in Nearly Defect-Free Core-Shell Nanowires Measured Using Time-Resolved Terahertz Spectroscopy.

Exciton dynamics in GaAs/(Al,Ga)As core-shell nanowires with shell quantum dots

Spatially Resolved Luminescence Investigation of Algaas/Gaas Single Quantum Wires Modified by Selective Implantation and Annealing

Optical Characterisation Of Catalyst Free Gaasp And Gaasp Core-Shell Nanowires Grown Directly On Si Substrates By Mbe

Gamma Ray Irradiated Silicon Nanowires: an Effective Model to Investigate Defects at the Interface of Si/Siox

Radiation-induced defects in the InGaN/GaN superlattice structure

Competing mechanisms of dominant radiative and Auger recombination in hot carrier generation in III-V semiconductor nanowires

Beam damage of single semiconductor nanowires during X-ray nano beam diffraction experiments