Abstract:The development of new high-density memories that can work in harsh environments such as high temperature and humidity will be significant for some special occasions such as oil and geothermal industries. Herein, a facial strategy for implementing a ternary memory device with high working temperature/humidity was executed. In detail, an asymmetric aggregation-induced-emission active molecule (azobenzol-decorated tetraphenylethylene, i.e., TPE-Azo) was embedded into flexible poly(ethylene-alt-maleic anhydride) (PEM) to prepare a composite, which served as an active layer to fabricate the FTO//Ag device. This device can demonstrate excellent ternary memory performances with a current ratio of 1:104.2:101.6 for "OFF", "ON1", and "ON2" states. Specially, it can exhibit good environmental endurance at high working temperature (350 °C) and humidity (RH = 90%). The ternary memory mechanism can be explained as the combination of aggregation-induced current/conductance and conformational change-induced charge transfer in the TPE-Azo molecule, which was verified by Kelvin probe force microscopy, UV–vis spectra, X-ray diffraction, and single-crystal structural analysis. This strategy can be used as a universal method for the construction of high-density multilevel memristors with good environmental tolerance.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c14686.Synthesis of TEP-Azo, detailed structural and material characterizations (1H NMR, 13C NMR, HRMS, FT-IR, TGA, SEM, and electrical characterizations), comparison study of other multilevel memristors, stability study on WORM devices, additional figures about endurance, multilevel behavior at different temperatures, and mechanism studies (PDF)Solvent evaporation method CCDC 2093221 (CIF)This article has not yet been cited by other publications.

Rewritable ternary data storage devices based on polymethacrylate containing pendent azobenzene–naphthalene with the combined effects of conformation change and charge traps

Dual-Mechanism-Controlled Ternary Memory Devices Fabricated by Random Copolymers with Pendent Carbazole and Nitro-Azobenzene

Adjustment of Conformation Change and Charge Trapping in Ion-Doped Polymers to Achieve Ternary Memory Performance

Different Steric-Twist-Induced Ternary Memory Characteristics In Nonconjugated Copolymers With Pendant Naphthalene And 1,8-Naphthalimide Moieties

Molecular Length Adjustment for Organic Azo-Based Nonvolatile Ternary Memory Devices

Conductivity Switching and Electronic Memory Effect in Polymers with Pendant Azobenzene Chromophores

Electrical conductivity switching and memory effects in poly(N-vinylcarbazole) derivatives with pendant azobenzene chromophores and terminal electron acceptor moieties

Zinc Ion Triggered Controllable Binary/Ternary Memory Conversion Behaviors in Polyimides Containing Pendant Porphyrin Group

Isomerization change and charge trap double mechanisms induced ternary data storage performance

Ternary Electrical Memory Devices Based on Polycarbazole: SnO2 Nanoparticles Composite Material

Two Different Memory Characteristics Controlled by the Film Thickness of Polymethacrylate Containing Pendant Azobenzothiazole

Quinoxaline-Based Donor-Acceptor Conjugated Polymers for Nonvolatile Ternary Memory Devices

Thermally Stable Ternary Data-Storage Device Based on Twisted Anthraquinone Molecular Design

Electrical Bistability and WORM Memory Effects in Donor–Acceptor Polymers Based on Poly(N‐vinylcarbazole)

The Effect of Annealing Temperature on the Maintenance of the Intermediate Electrical Conductivity State of a Ternary‐Polyamide‐Based Memory Device

Ternary Conductance Switching Realized by a Pillar[5]arene-Functionalized Two-Dimensional Imine Polymer Film.

Adjustment of Charge Trap Number and Depth in Molecular Backbone to Achieve Tunable Multilevel Data Storage Performance

Embedding Azobenzol-Decorated Tetraphenylethylene into the Polymer Matrix to Implement a Ternary Memory Device with High Working Temperature/Humidity

Rewritable and non-volatile memory effects based on polyimides containing pendant carbazole and triphenylamine groups

Nonvolatile WORM Memory Devices Based on Polymethacrylate with Azoanthraquinone Group

Enhanced Ternary Memory Performances with High-Temperature Tolerance in AIE@PBI Composites by Tuning the Azobenzol Substituents on Tetraphenylethylene