Compact 4×5 Gb/s Silicon-on-Insulator OFDM Transmitter

Yiwei Xie,Leimeng Zhuang,Ronald Broeke,Qibing Wang,Binhuang Song,Zihan Geng,Arthur James Lowery

DOI: https://doi.org/10.1364/ofc.2017.w2a.9

2017-01-01

Abstract:We characterize an integrated silicon 4×5 Gb/s OFDM transmitter PIC (2.1×4.8 mm 2 ) with four modulators and an optical Fourier transform. This PIC features a channel spacing of 5 GHz and an 80-GHz free spectral range.

What problem does this paper attempt to address?

Silicon Photonic Micro-Ring Modulator-based 4 x 112 Gb/s O-band WDM Transmitter with Ring Photocurrent-based Thermal Control in 28nm CMOS

Z. Xuan,J. Sharma,Chun-Ming Hsu,P. Liao,Ranjeet Kumar,M. Sakib,Hao Li,H. Rong,J. Jaussi,G. Balamurugan

2021-06-13

Abstract:We present a 4λ×112 Gb/s/λ hybrid-integrated silicon photonic TX suitable for 400G Ethernet modules and co-packaged optics. The photonic IC (PIC) uses cascaded micro-ring modulators (MRMs) with integrated heaters for efficient wavelength division multiplexing (WDM). The 28nm CMOS electronic IC includes PAM4 MRM drivers with nonlinear FFE and control circuits to stabilize MRM performance against process and temperature variations. A thermal control scheme based on sensing MRM photocurrents is used to minimize monitoring hardware in the PIC. Measured results demonstrate 112 Gb/s PAM4 operation with <0.7 dB TDECQ from each of the 4 channels. To our best knowledge, this is the highest per-λ data rate reported for an O-band ring-based WDM transmitter.

Physics,Engineering
An 800G Integrated Silicon-Photonic Transmitter based on 16-Channel Mach-Zehnder Modulator and Co-Designed 5.35pJ/bit CMOS Drivers.

Jingbo Shi,Han Liu,Tao Yang,Ming Jin,Haowen Shu,Fenghe Yang,Lei Shi,Yuansheng Tao,Jianrui Deng,Ruixuan Chen,Changhao Han,Jian Liu,Nanjian Wu,Nan Qi,Liyuan Liu

DOI: https://doi.org/10.1109/ISCAS46773.2023.10181563

2023-01-01

Abstract:A 800G integrated silicon-photonic transmitter is presented, including a 16-channel photonic integrated chip (PIC) and two electrical chiplets (EICs) that are realized based on an arrayed travelling wave dual-drive Mach-Zehnder modulator (MZM) and two 8-channel CMOS drivers. The proposed multi-channel PIC is fabricated on a high-resistance silicon-on-insulator (SOI) wafer with a 220 nm thick silicon layer and a 2 mu m thick buried oxide (BOX) using the foundry-ready CMOS process, while the drivers are implemented in a standard 65nm CMOS process. The driver employs a combination of distributed architecture, 2-tap feedforward equalization (FFE) and push-pull output stage, experimentally exhibiting an averaged bandwidth higher than 28.5GHz and a differential swing of 4.0Vpp on 50O load, respectively. The 50Gb/s electrical eye-diagram is measured with 1.41ps rms-jitter, while the optical extinction ratio (ER) exceeds 3.0dB with 5.35pJ/bit power efficiency.
16-Channel Photonic–electric Co-Designed Silicon Transmitter with Ultra-Low Power Consumption

Jingbo Shi,Ming Jin,Tao Yang,Haowen Shu,Fenghe Yang,Han Liu,Yuansheng Tao,Jiangrui Deng,Ruixuan Chen,Changhao Han,Nan Qi,Ingjun Wang

DOI: https://doi.org/10.1364/prj.469556

IF: 7.6

2023-01-01

Photonics Research

Abstract:A hybrid integrated 16-channel silicon transmitter based on co-designed photonic integrated circuits（PICs） and electrical chiplets is demonstrated. The driver in the 65 nm CMOS process employs the combination of a distributed architecture, two-tap feedforward equalization（FFE）, and a push–pull output stage, exhibiting an estimated differential output swing of 4.0Vpp. The rms jitter of 2.0 ps is achieved at 50 Gb/s under nonreturnto-zero on–off keying（NRZ-OOK） modulation. The PICs are fabricated on a standard silicon-on-insulator platform and consist of 16 parallel silicon dual-drive Mach–Zehnder modulators on a single chip. The chip-on-board co-packaged Si transmitter is constituted by the multichannel chiplets without any off-chip bias control, which significantly simplifies the system complexity. Experimentally, the open and clear optical eye diagrams of selected channels up to 50 Gb/s OOK with extinction ratios exceeding 3 dB are obtained without any digital signal processing. The power consumption of the Si transmitter with a high integration density featuring a throughput up to 800 Gb/s is only 5.35 p J/bit, indicating a great potential for massively parallel terabit-scale optical interconnects for future hyperscale data centers and high-performance computing systems.
Silicon Photonic Microring-Based 4 × 112 Gb/s WDM Transmitter With Photocurrent-Based Thermal Control in 28-nm CMOS

Jahnavi Sharma,Zhe Xuan,Hao Li,Taehwan Kim,Ranjeet Kumar,Meer N. Sakib,Chun-Ming Hsu,Chaoxuan Ma,Haisheng Rong,Ganesh Balamurugan,James Jaussi

DOI: https://doi.org/10.1109/jssc.2021.3134221

2022-04-01

Abstract:This work presents a hybrid-integrated 4-$\lambda $ micro-ring modulator-based wavelength-division multiplexed (WDM) optical transmitter (OTX) in the O-band, suitable for co-packaged optics. It supports up to 112 Gb/s per wavelength using high-bandwidth micro-ring modulators (MRMs) together with nonlinear equalization in the driver electronics. A thermal control scheme using MRM photocurrent to sense process and temperature variations is implemented, enabling <0.05 dB TDECQ penalty over 10 °C. This compact photocurrent-based control method significantly reduces the hardware and packaging overhead required for ring-based WDM transceivers. Measurements from a 4-$\lambda $ OTX with 28-nm CMOS electronic IC (EIC) and custom silicon photonic IC (PIC) show the OTX supports 112 Gb/s with <0.7 dB TDECQ across all four channels while dissipating 5.8 pJ/bit in the electronics.

engineering, electrical & electronic
A 4×112 Gb/s PAM-4 Silicon-Photonic Transmitter and Receiver Chipsets for Linear-Drive Co-Packaged Optics

Han Liu,Zhihan Zhang,Ye Liu,Daigao Chen,Donglai Lu,Jian He,Guike Li,Min Liu,Ziyue Dang,Xi Xiao,Nan Qi

DOI: https://doi.org/10.1109/jssc.2024.3435378

IF: 5.4

2024-09-28

IEEE Journal of Solid-State Circuits

Abstract:A Gb/s hybrid-integrated silicon photonic (SiPh) transmitter and receiver chipsets are presented for the linear-drive co-packaged optics (CPO). A quad-channel open-collector (OC) driver is co-designed with the arrayed traveling-wave (TW) Mach-Zehnder modulator (MZM) for high bandwidth (BW) and high efficiency. A second-order hybrid passive-active continuous-time linear equalizer (CTLE) is proposed to compensate for the nonlinear channel loss up to 12 dB. A linear trans-impedance amplifier (TIA) is proposed with a T- input network and cascaded embedded CTLE, which boosts the BW while maintaining a flat in-band frequency response. Implemented in 180-nm SiGe BiCMOS, the driver and TIA are measured with over 35-GHz BW. The complete SiPh TRX is built by co-packaging both the driver with MZM and TIA with photodetector (PD). Experimental results show 112-Gb/s PAM-4 eyes of both the E-to-O modulation and O-to-E reception. The OTX achieves a 5-dB optical extinction ratio (ER) and 4.8-pJ/bit power efficiency, while the ORX achieves 67-dB trans-impedance and 2.95-pJ/bit power efficiency. To emulate CPO application, a compact-size evaluation board (EVB) is made, and four-channel tests are completed.

engineering, electrical & electronic
8-λ × 50 Gbps/λ Heterogeneously Integrated Si-Ph DWDM Transmitter

Cooper S. Levy,Zhe Xuan,Jahnavi Sharma,Duanni Huang,Ranjeet Kumar,Chaoxuan Ma,Guan-Lin Su,Songtao Liu,Jinyong Kim,Xinru Wu,Tolga Acikalin,Haisheng Rong,Ganesh Balamurugan,James E. Jaussi

DOI: https://doi.org/10.1109/jssc.2023.3344072

IF: 5.4

2024-02-27

IEEE Journal of Solid-State Circuits

Abstract:We demonstrate a 3-D heterogeneously integrated dense wavelength-division multiplexing (DWDM) silicon-photonic transmitter simultaneously modulating eight 200-GHz spaced wavelengths at 50 Gbps/ each, to deliver an aggregate per-fiber bandwidth of 400 Gbps. All necessary -band optical components are fully integrated on the photonic integrated circuit (PIC), including an eight-wavelength laser array, a broadband semiconductor optical amplifier (SOA), and eight microring modulators (MRMs). Eight 50-Gbps non-return-to-zero (NRZ) modulator drivers, capable of delivering 2- modulation voltage, are integrated in a 28-nm CMOS electronic IC (EIC). The EIC also includes a thermal control unit (TCU) to align the eight MRMs to the eight laser wavelengths by appropriately tuning integrated MRM heaters. The measured energy efficiency at 50 Gb/s of the high-speed electronics, including serializer overhead, is 1.17 pJ/bit.

engineering, electrical & electronic
All-optical Wavelength Conversion and Five-Channel Multicasting for 20 Gbit/s QPSK Signals in a Silicon Waveguide.

Xiaoyan Wang,Lingchen Huang,Ke Yi,Xianglian Feng,Shiming Gao

DOI: https://doi.org/10.1364/ol.39.006122

2014-01-01

Abstract:Wavelength conversion and five-channel multicasting for 20 Gbit/s quadrature phase-shift keying signals have been experimentally demonstrated based on four-wave mixing in a silicon waveguide with digital coherent detection. The eye diagrams and constellation diagrams of the converted and multicasting idlers are successfully observed. Moreover, the bit-error rates (BERs) of the generated idlers are measured and the power penalties are all less than 0.7 dB at a BER of 3×10(-3).
A Compact 112-Gbaud PAM-4 Silicon Photonics Transceiver for Short-Reach Interconnects

David Weng U. Chan,Gai Zhou,Xiong Wu,Yeyu Tong,Junwei Zhang,Chao Lu,Alan Pak Tao Lau,Hon Ki Tsang

DOI: https://doi.org/10.1109/jlt.2022.3141906

IF: 4.7

2022-04-15

Journal of Lightwave Technology

Abstract:For next generation highly integrated transceivers, silicon photonics (SiP) has attracted widespread interest in using mature CMOS production processes to manufacture high-yield, low-cost photonic integrated circuits (PIC) with the potential for integration with CMOS electronics. SiP now routinely integrate GeSi electroabsorption modulators (EAM) and GeSi waveguide photodiodes which have high responsivity and possess 3-dB electro-optic bandwidth of over 65 GHz. Their ultra-compact dimensions make it possible for multi-channel transceivers to be realized on a small chip area. In this paper, we demonstrate the high-speed capability of these devices incorporated with optimized digital signal processing (DSP) for 100 Gbaud PAM-4 signaling. Using integrated GeSi-EAM and GeSi-photodiode fabricated at a commercial foundry, we carried out intensity modulation and direct detection (IM-DD) transmission experiments in C-band using PAM-4, for both back-to-back and SSMF transmission at 1 km and 1.5 km. Under a 6-dB system bandwidth of 43GHz we attained, with the help of DSP equalization, a record 112 Gbaud (224 Gbs), 108 Gbaud (216 Gbs) and 100 Gbaud (200 Gbs) are achieved over back-to-back, 1 km and 1.5 km SSMF transmission respectively, with a bit-error-rate (BER) below the hard-decision forward-error-correction (HD-FEC) threshold of 3.8E-3.

engineering, electrical & electronic,optics,telecommunications
Up to 170Gbaud Optical Interconnects with Integrated CMOS-Silicon Photonics Transmitter

Xiansong Fang,Ke Li,David J. Thomson,Fan Yang,Shenghao Liu,Weiwei Zhang,Wei Cao,Callum G. Littlejohns,XingZhao Yan,Martin Ebert,Mehdi Banakar,Dehn Tran,Fanfan Meng,Han Du,Graham T. Reed,Fan Zhang

DOI: https://doi.org/10.1109/ACP55869.2022.10088674

2022-01-01

Abstract:We investigate the performance boundary of integrated CMOS silicon photonics transmitters with DSP techniques. 170Gbaud OOK generation and 120Gbaud 20km transmission is achieved with a CMOS-silicon transmitter, where the driver amplifier only consumes 158mW.
A Compact Low-Power 320-Gb/s WDM Transmitter Based on Silicon Microrings

Ran Ding,Yang Liu,Qi Li,Zhe Xuan,Yangjin Ma,Yisu Yang,Andy Eu-Jin Lim,Guo-Qiang Lo,Keren Bergman,Tom Baehr-Jones,Michael Hochberg

DOI: https://doi.org/10.1109/jphot.2014.2326656

IF: 2.4

2014-06-01

IEEE Photonics Journal

Abstract:We demonstrate a compact and low-power wavelength-division multiplexing transmitter near a 1550-nm wavelength using silicon microrings. The transmitter is implemented on a silicon-on-insulator photonics platform with a compact footprint of 0.5 mm2. The transmitter incorporates 8 wavelength channels with 200-GHz spacing. Each channel achieved error-free operation at 40 Gb/s, resulting in an aggregated data transmission capability of 320 Gb/s. To our knowledge, this is the highest aggregated data rate demonstrated in silicon wavelength-division multiplexing transmitters. Owing to the small device capacitance and the efficient pn-junction modulator design, the transmitter achieves low energy-per-bit values of 36 fJ/bit under 2.4 Vpp drive and 144 fJ/bit under 4.8 Vpp drive. Comparisons are made to a commercial lithium niobate modulator in terms of bit-error-rate versus optical signal-to-noise ratio.

engineering, electrical & electronic,optics,physics, applied
An integrated 60GHz 5Gb/s QPSK transmitter with on-chip T/R switch and fully-differential PLL frequency synthesizer in 65nm CMOS

Lixue Kuang,Baoyong Chi,Lei Chen,Meng Wei,Xiaobao Yu,Zhihua Wang

DOI: https://doi.org/10.1109/ASSCC.2013.6691070

2013-01-01

Abstract:An integrated 60GHz 5Gb/s QPSK transmitter with on-chip T/R switch and fully-differential PLL frequency synthesizer in 65nm CMOS is presented. Direct QPSK modulation is implemented during the first up-conversion, followed by the final up-conversion mixer and power amplifier (PA) as well as on-chip T/R switch. Distributed amplifier technique is utilized to extend the bandwidth of PA. Along with other bandwidth extension techniques, in-band gain variation in signal link is minimized to improve the error vector magnitude (EVM). To reject common-mode noise and improve phase noise performance, a 40GHz fully-differential PLL frequency synthesizer is implemented to provide LO signals and various clocks. The measured output power is 6.4dBm at 60GHz, with 1.2dB gain variation over >6GHz bandwidth. On-chip 27-1 PRBS generators are used to measure the transmitter performance, and the measured EVM is -21.9dB with 5Gb/s QPSK modulation. The transmitter and the PLL & LO distribution network consume 73mW and 62mW, respectively.
Compact and power-efficient silicon modulators Beyond 60 Gbit/s

Xi Xiao,Hao Xu,Xianyao Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/CLEOPR.2013.6600260

2013-01-01

Abstract:Compact and high-speed silicon microring and Mach-Zehnder modulators are presented. Low-power serial 60 Gbit/s and 4λ×50 Gbit/s modulations are both experimentally demonstrated.
Integrated All-Optical Wavelength Multicasting for 40 Gbit/S Pdm-Qpsk Signals Using A Single Silicon Waveguide

Xianglian Feng,Zhihang Wu,Xiaoyan Wang,Shiming Gao

DOI: https://doi.org/10.1016/j.optlastec.2017.03.039

2017-01-01

Abstract:All-optical wavelength multicasting is presented and experimentally demonstrated for 40 Gbit/s polarization-division-multiplexed (PDM) nonreturn-to-zero quadrature phase-shift keying (QPSK) signals using four-wave mixing (FWM) with angled-polarization pumps in a silicon waveguide. Five multicast channels are obtained on the generated idlers. The eye diagrams, constellation diagrams, and bit error rates (BERs) of the QPSK sequences on the two polarization states are measured for each wavelength channel. The power penalties of all these multicast QPSK sequences on x or y polarization state are less than 2.0 dB at the BER of 3 x 10(-3). (C) 2017 Elsevier Ltd. All rights reserved.
A 50-Gb/s PAM-4 Silicon-Photonic Transmitter Incorporating Lumped-Segment MZM, Distributed CMOS Driver, and Integrated CDR

Qiwen Liao,Yuguang Zhang,Siyuan Ma,Lei Wang,Leliang Li,Guike Li,Zhao Zhang,Jian Liu,Nanjian Wu,Liyuan Liu,Yong Chen,Xi Xiao,Nan Qi

DOI: https://doi.org/10.1109/jssc.2021.3134874

2022-03-01

Abstract:This article presents a 50-Gb/s optical transmitter (TX), consisting of a 40-nm distributed CMOS driver and a 180-nm silicon-photonic modulator. A lumped-segment Mach–Zehnder modulator (LS-MZM) is developed for high bandwidth (BW) four-level pulse amplitude (PAM-4) modulation. A multi-segment driver with limiting outputs is co-designed, which is distributed into each LS-MZM segment. By grouping these LS-MSM segments in a thermometer code, high-linearity modulation is realized without the need of power-hungry high-swing linear drivers. To improve the optical PAM-4 signal integrity, in-segment multiplexing along with clock phase interpolation is adopted to synchronize the electrical and optical signals across all segments. The hybrid coupling between the driver and modulator is devised to boost the BW of the high-speed data path, while a half-rate clock and data recovery (CDR) circuit is integrated to remove the accumulated jitter. Measurements show that the TX exhibits an extinction ratio (ER) of up to 9.8 dB and a 0.99 ratio of the level mismatch. A figure-of-merit (FoM) of 1.39 pJ/bit/dB corresponds to a 682-mW power, which can be further reduced by 40%, at the cost of a degraded ER of 4 dB. The PAM-4 CDR helps to achieve $< 10^{-12}$ BER and >0.1-$\text{U}I_{\mathrm {pp}}$ jitter tolerance (JTOL) from 10 to 100 MHz.

engineering, electrical & electronic
SiP-based 60ghz 4&#x00d7;4 Antenna Array with 90nm CMOS OOK Modulator in LTCC

M. K. Karim,Mengtao Sun,Lawrence Ong,Yong‐Xin Guo,James Brinkhoff,Kai Kang,Fujiang Lin

DOI: https://doi.org/10.1109/mwsym.2010.5517167

2010-01-01

Abstract:A 60GHz 4×4 circular polarized (CP) patch array antenna with a 90nm CMOS OOK modulator are designed and integrated in low temperature cofired ceramic (LTCC) substrate to form a SiP-based transmitter. By applying a stripline sequential rotation feeding scheme, the CP array exhibits a wide impedance bandwidth (VSWR<2) and 3dB axial ratio (AR) bandwidth, both over 8GHz. It has a beam-shaped pattern with a 3dB beamwidth of 20° and a peak gain of 16.8dBi. The CMOS modulator includes a 60GHz oscillator and switchable amplifiers to provide the OOK modulation. By applying a bond wire compensation scheme and low-loss transition optimization, the CMOS modulator is successfully integrated into the package with 2mil 500µm long bond wires. The final fabricated prototype measures only 22×13×1.4mm 3 . The 60GHz SiP transmitter is tested with a commercial receiver and a data rate of 2Gbps is demonstrated. The energy usage at 2Gb/s is only 13.2pJ/bit for the modulator.
Beyond 300gb/s from an Integrated Single-Channel Silicon Photonics Modulator Driver Combination

Ke Li,David J. Thomson,Lingjun Zhou,Weiwei Zhang,Shenghao Liu,Wei Cao,Callum G. Littlejohns,XingZhao Yan,Martin Ebert,Mehdi Banakar,Dehn Tran,Fanfan Meng,Lei Wang,Zhixue He,Fan Zhang,Shaohua Yu,Graham T. Reed

DOI: https://doi.org/10.1109/siphotonics60897.2024.10543408

2024-01-01

Abstract:We investigate the performance boundary of integrated CMOS silicon photonics transmitters by using optical equalisation techniques. Without using any off-line DSP techniques at the receiver side, experimental results demonstrate 182Gbps OOK and 308Gbps PAM-4 transmissions with the energy efficiency including driver, of better than 1pJ/bit.
A 256 Gbps Heterogeneously Integrated Silicon Photonic Microring-based DWDM Receiver Suitable for In-Package Optical I/O

Z. Xuan,J. Sharma,Jinyong Kim,Cooper S. Levy,G. Su,Songtao Liu,Xinru Wu,Chaoxuan Ma,Ranjeet Kumar,Tolga Acikalin,H. Rong,Duanni Huang,J. Jaussi,G. Balamurugan

DOI: https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185280

2023-06-11

Abstract:We present a 256 Gb/s (8$\lambda$*32 Gb/s/$\lambda$) 3D-integrated silicon photonic (SiPh) receiver suitable for integration in XPU/switch packages. The photonic IC (PIC) integrates a multi-wavelength laser, optical amplifier, and cascaded micro-ring resonators (MRRs) to implement dense wavelength division multiplexing (DWDM) with minimal footprint. The 28nm CMOS electronic IC includes eight SerDes channels, and PIC interface/control electronics. A dither-based thermal control unit tunes MRRs in the optical demux to align with the laser grid with sub-pm resolution. Measured results demonstrate BER<1e-12 when receiving 256 Gb/s DWDM input generated by MRRs modulating eight 200 GHz-spaced wavelengths. This is 2X higher aggregate bandwidth than previously published SiPh MRR-based receivers, with higher level of photonic integration.

Physics,Computer Science,Engineering
Optimized Photonic-Electronic Co-Design for Hybrid Integrated Silicon-Based Optical Transmitters

Daofa Wang,Ye Jin,Han Liu,Yingjie Ma,Ang Li,Yujun Xie,Menghan Yang,Guike Li,Yang Qu,Peng Wang,Ye Xiao,Jinping Guo,Rui Yang,Wei Li,Nan Qi,Ming Li

DOI: https://doi.org/10.1109/lpt.2024.3496088

IF: 2.6

2024-11-25

IEEE Photonics Technology Letters

Abstract:The increasing demand for high-speed and energy-efficient data transmission in global communication networks has driven the development of advanced optical interconnect technologies. This work explores the integration of an optical transmitter utilizing silicon photonic Mach-Zehnder modulators (MZMs) and drivers through a wire-bonding package. Fabricated on a silicon-on-insulator (SOI) platform, the MZMs leverage a single-drive series push-pull design to achieve high-speed modulation up to 112 Gbps and a 37 GHz bandwidth at a 3 V reverse DC bias, along with a modulation efficiency of 2.16 V cm. The transmitter architecture incorporates a four-channel driver array, and experimental results demonstrate a bandwidth of 46 GHz with the capability to deliver a total data rate beyond 200 Gbps. An optimized photonic-electronic co-design on optoelectronic chips holds the promise of facilitating higher data transmission rates.

engineering, electrical & electronic,optics,physics, applied
53 GBd PAM-4 fully-integrated silicon photonics transmitter with a hybrid flip-chip bonded laser

Sanghwa Yoo,Heuk Park,Jyung Chan Lee,Eun Kyu Kang,Joon Young Huh,Gye Sul Cho,Haechung Kang,Dae Woong Moon,Jong Jin Lee,Joon Ki Lee

DOI: https://doi.org/10.1364/OE.474256

2022-11-07

Abstract:We present a fully-integrated single-lane 53 GBd PAM-4 silicon photonics (SiPh) transmitter (Tx) with a flip-chip bonded laser diode (LD). The LD is butt-coupled to a Si edge coupler including a SiO2 suspended spot-size converter. The coupled power exceeds 10 dBm with a 1 dB allowable misalignment of 2.3 µm. The RF and eye performances of the Tx are evaluated. Extinction ratio >5 dB is obtained at 3.5 Vppd voltage swing. Aided by silicon capacitors, the Tx decouples parasitic inductances leading to remarkable improvements in the eye openings and transmitter dispersion eye closure quaternary by 1.16 dB. By implementing the fully-integrated Tx with driver packaging, we successfully demonstrate 106 Gb/s real-time operation satisfying KP4-FEC threshold at -5 dBm receiver sensitivity.
A 5-Gb/s 156-Mw Transceiver with Ffe/Analog Equalizer in 90-Nm Cmos Technology

Wang Xinghua,Wang Zhengchen,Gui Xiaoyan

DOI: https://doi.org/10.2991/iccmcee-15.2015.151

2015-01-01

Abstract:A 5-Gb/s transceiver in 90nm technology has been presented in this paper. To mitigate the effects of channel loss, a 4-tap feed-forward equalizer (FFE) is included in the transmitter. Meanwhile, the receiver employs continuous-time linear equalizer (CTLE) to amplify high frequency signal. The clocks of the transmitter are supplied by Phase-Locked Loops (PLL) while clocks in the receiver are provided by clock recover circuit (CDR). To facilitate the testing, built-in pseudo-random sequence (PRBS) generator and PRBS detector are integrated in this chip. Fabricated in 90nm CMOS technology, the transceiver consumes 156mW under 1.2V supply.

Compact 4×5 Gb/s Silicon-on-Insulator OFDM Transmitter

Silicon Photonic Micro-Ring Modulator-based 4 x 112 Gb/s O-band WDM Transmitter with Ring Photocurrent-based Thermal Control in 28nm CMOS

An 800G Integrated Silicon-Photonic Transmitter based on 16-Channel Mach-Zehnder Modulator and Co-Designed 5.35pJ/bit CMOS Drivers.

16-Channel Photonic–electric Co-Designed Silicon Transmitter with Ultra-Low Power Consumption

Silicon Photonic Microring-Based 4 × 112 Gb/s WDM Transmitter With Photocurrent-Based Thermal Control in 28-nm CMOS

A 4×112 Gb/s PAM-4 Silicon-Photonic Transmitter and Receiver Chipsets for Linear-Drive Co-Packaged Optics

8-λ × 50 Gbps/λ Heterogeneously Integrated Si-Ph DWDM Transmitter

All-optical Wavelength Conversion and Five-Channel Multicasting for 20 Gbit/s QPSK Signals in a Silicon Waveguide.

A Compact 112-Gbaud PAM-4 Silicon Photonics Transceiver for Short-Reach Interconnects

Up to 170Gbaud Optical Interconnects with Integrated CMOS-Silicon Photonics Transmitter

A Compact Low-Power 320-Gb/s WDM Transmitter Based on Silicon Microrings

An integrated 60GHz 5Gb/s QPSK transmitter with on-chip T/R switch and fully-differential PLL frequency synthesizer in 65nm CMOS

Compact and power-efficient silicon modulators Beyond 60 Gbit/s

Integrated All-Optical Wavelength Multicasting for 40 Gbit/S Pdm-Qpsk Signals Using A Single Silicon Waveguide

A 50-Gb/s PAM-4 Silicon-Photonic Transmitter Incorporating Lumped-Segment MZM, Distributed CMOS Driver, and Integrated CDR

SiP-based 60ghz 4&amp;#x00d7;4 Antenna Array with 90nm CMOS OOK Modulator in LTCC

Beyond 300gb/s from an Integrated Single-Channel Silicon Photonics Modulator Driver Combination

A 256 Gbps Heterogeneously Integrated Silicon Photonic Microring-based DWDM Receiver Suitable for In-Package Optical I/O

Optimized Photonic-Electronic Co-Design for Hybrid Integrated Silicon-Based Optical Transmitters

53 GBd PAM-4 fully-integrated silicon photonics transmitter with a hybrid flip-chip bonded laser

A 5-Gb/s 156-Mw Transceiver with Ffe/Analog Equalizer in 90-Nm Cmos Technology

SiP-based 60ghz 4×4 Antenna Array with 90nm CMOS OOK Modulator in LTCC