Abstract:In recent years, there has been growing interest in the exploration of rare earth oxides for their potential as high-k gate dielectrics. Lanthanum oxide (La2O3) has emerged as a particularly noteworthy candidate due to its impressive dielectric properties, wide bandgap, strong thermodynamic stability, and remarkable compatibility with silicon substrates. However, La2O3 has a significant problem for MOS device applications due to its hygroscopicity and low crystallization temperature, making it unsuitable for high-temperature treatment during fabrication. To improve its oxide quality, it can be doped. Al-doped La2O3 (LaAlOx) thin films annealed at different temperatures were prepared on n-type Si substrates by sol-gel method and the effect of temperature variation on LaAlOx thin films as gate dielectrics were investigated in terms of root-mean-square, interfacial properties, and electrical properties. The findings indicate that the introduction of Al doping raises the crystallization temperature of La2O3. Additionally, it was observed that the root-mean-square roughness of the LaAlOx films decreases from 0.919 nm to 0.320 nm with an increase in annealing temperature from 500 to 700°C. XPS has the capability to assess the interfacial characteristics of LaAlOx. It is evident that elevated temperatures promote the formation of M-O bonds, diminish film defects, and enhance the overall interfacial quality of the film. In addition, analyzed the electrical properties of the Al/ LaAlOx/Si/Al metal-oxide-semiconductor capacitors The findings indicate that the samples annealed at 700°C exhibit favorable electrical characteristics, demonstrating a dielectric constant of 20.91 under a gate voltage of 1 V and a leakage current density of 3.54×10− 3A/cm2.

Annealing-Temperature-Modulated Optical, Electrical Properties, And Leakage Current Transport Mechanism Of Sol-Gel-Processed High-K Hfalox Gate Dielectrics

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Baking-Temperature-Modulated Optical and Electrical Properties of Hftiox Gate Dielectrics Via Sol-Gel Method

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature

Solution-processed HfGdO Gate Dielectric Thin Films for CMOS Application: Effect of Annealing Temperature

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack

Annealing Temperature Dependent Microstructure and Optical Properties of HfxTi1-xO2 Thin Films

Optical and Electrical Properties of Plasma-Oxidation Derived HfO2 Gate Dielectric Films

The Performance of LaAlO X Gate Dielectric Films Prepared by Sol-Gel Method at Different Temperatures of Annealing

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Interfacial Control and Modulation of Band Alignment of Atomic Layer Deposition-Derived Hfo2/Si Gate Stack by Rapid Thermal Annealing

Modulation of the Microstructure, Optical, and Electrical Properties of HfYO Gate Dielectrics by Annealing Temperature

Atomic-layer-deposited (ALD) Al2O3 Passivation Dependent Interface Chemistry, Band Alignment and Electrical Properties of HfYO/Si Gate Stacks

Effect of Annealing Temperature on the Optical and Interfacial Properties of Al2o3 Gate Dielectric Film Grown by Dimethylaluminumhydride New Chemistry

Microstructure and Interfacial Properties of HfO2–Al2O3 Nanolaminate Films

Annealing Modulated Microstructural and Electrical Properties of Plasma-Enhanced Atomic Layer Deposition-Derived HfO2/SiO2 Nanolaminates on AlGaN/GaN

Effects of Rapid Thermal Annealing on Interfacial and Electrical Properties of Gd-doped HfO2 High-K Gate Dielectrics

Annealing Temperature-Dependent Microstructure and Optical and Electrical Properties of Solution-Derived Gd-doped ZrO2 High-K Gate Dielectrics