Adjustable localized states in perfect and single C‐chain doped zigzag AlN nanoribbons

Lijia Tong,Zheng Chen,Jianwei Li,Hongxiang Zong,Jing Zhang
DOI: https://doi.org/10.1002/pssb.201600489
2017-01-01
Abstract:The localized feature of electronic states is often related to some interesting electronic properties in graphite-like materials. We use the first principles calculations to investigate two important localized states, that is, flat-band states and border states, in zigzag AlN nanoribbons (zAlNNRs). Our results indicate that both localized states can exist in zAlNNRs and the border states have a close relationship with electrical conductivity. It is found that the flat-band states of perfect zAlNNRs result from edge N-p(z) orbitals, while the border states of doped zAlNNRs are due to /* orbitals of C and Al/N atoms. These findings enrich our understanding on localized states in zAlNNRs, showing a potential application in functional nanodevices.
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